Electron beam-induced modification of organic monolayers on Si(1 1 1) surfaces used for selective electrodeposition

The present work deals with selective electrodeposition of Cu on n-type Si(111) surfaces covered with organic monolayers and e-beam modified using an e-beam lithographic technique. The organic layer (undecylenic acid or 1-decene) was covalently attached to a hydrogen-terminated Si surface. Using a scanning electron microscope (SEM) equipped with a lithographic tool these organic monolayers were locally irradiated and modified. Copper was electrochemically deposited in the e-beam modified regions. The results show clearly that the selectivity of the deposition of Cu in e-beam modified regions strongly depends on the applied e-beam dose. By optimization of the electrochemical parameters uniform deposition can be achieved therefore this process represents a novel approach for a direct high resolution patterning of Si surfaces.