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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAIO3/SrTiO3 interface as a function of LaAIO3 growth conditions

  • J. L. Maurice
  • , G. Herranz
  • , C. Colliex
  • , I. Devos
  • , C. Carrétéro
  • , A. Barthélémy
  • , K. Bouzehouane
  • , S. Fusil
  • , D. Imhoff
  • , É Jacquet
  • , F. Jomard
  • , D. Ballutaud
  • , M. Basletic
  • Unité Mixte de Physique CNRS/Thales
  • Laboratoire de Physique des Solides
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie
  • Institut d'Electronique de Microélectronique et de Nanotechnologie (IEMN)
  • Centre national de la recherche scientifique

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

After the epitaxy of LaAlO3 on a TiO2-terminated {100} surface of SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss "spectrum images", recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.

Original languageEnglish
Article number17003
JournalEPL
Volume82
Issue number1
DOIs
Publication statusPublished - 1 Apr 2008
Externally publishedYes

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