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Electron-phonon coupling and transient dynamics of hot carriers: from interpretation of photoemission experiments to transport simulations in devices

  • Centre de Nanosciences et Nanotechnologies
  • Université Paris-Saclay
  • ENS Paris-Saclay
  • CNRS
  • Sorbonne Université

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The progress in DFT-based description of the electron-phonon scattering allowed to describe the relaxation dynamics of hot or photoexcited electrons in several materials, in very good agreement with time-resolved spectroscopy experiments. As hot carriers also start to attract attention in the context of emerging concepts for energy conversion, here we present our first results related to the coupling of ab initio data with device-oriented Monte Carlo simulation methods. We show that DFT-based description of the electron-phonon intervalley scattering in GaAs, coupled with the stochastic Monte Carlo method, allows to describe the energy transfer from electrons to phonons in transient regime, in good agreement with previous time-resolved photoemission experiments.

Original languageEnglish
Title of host publicationAdvances in Ultrafast Condensed Phase Physics IV
EditorsStefan Haacke
PublisherSPIE
ISBN (Electronic)9781510673021
DOIs
Publication statusPublished - 1 Jan 2024
EventAdvances in Ultrafast Condensed Phase Physics IV 2024 - Strasbourg, France
Duration: 9 Apr 2024 → 11 Apr 2024

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12992
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceAdvances in Ultrafast Condensed Phase Physics IV 2024
Country/TerritoryFrance
CityStrasbourg
Period9/04/24 → 11/04/24

Keywords

  • Monte Carlo simulations
  • electron-phonon coupling
  • photoexcited electrons
  • semiconductor

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