ELECTRONIC CORRELATION AND THE SI(100) SURFACE: BUCKLING VERSUS NONBUCKLING.

  • ANTONIO REDONDO
  • , WILLIAM A. GODDARD

Research output: Contribution to journalConference articlepeer-review

Abstract

THEORETICAL CLUSTER CALCULATIONS FOR THE SI(100) SURFACE INDICATE THAT THE USE OF DOUBLY OCCUPIED ORBITAL WAVEFUNCTIONS, SUCH AS THE CLOSED-SHELL HARTREE-FOCK (HF), LEAD TO AN ASYMMETRIC DIMER DESCRIPTION OF THE SURFACE. THE INCLUSION OF ELECTRON CORRELATION PRODUCES A SYMMETRIC DIMER DESCRIPTION WITH A GROUND STATE APPROXIMATELY 1. 0 EV BELOW THE MINIMUM OF THE HF BUCKLED DIMER. THERE ARE TWO LOW-LYING STATES OF THE SYMMETRIC DIMER (A SINGLET AND A TRIPLET) WITH VERY DIFFERENT GEOMETRIES. ENERGY MINIMIZATION CALCULATIONS INDICATE THAT A (2 * 1) STRUCTURE IS FAVORED OVER A C(2 * 2) STRUCTURE.IONIZATION POTENTIALS FOR SURFACE AND SI(2P) CORE ELECTRONSTHAT ARE CONSISTENT WITH CURRENT EXPERIMENTAL DATA ARE ALSOREPORTED.

Original languageEnglish
Pages (from-to)344-350
Number of pages7
JournalJ Vac Sci Technol
VolumeV 21
Issue numberN 2
DOIs
Publication statusPublished - 1 Jan 1982
Externally publishedYes
EventPROC OF THE ANNU CONF ON THE PHYS AND CHEM OF SEMICOND INTERFACES, 9TH - Pacific Grove, CA, USA
Duration: 27 Jan 198229 Jan 1982

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