Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7

Fausto Sirotti; Maurizio DeSantis; Xiaofeng Jin; Giorgio Rossi

doi:10.1016/0169-4332(93)90759-5

Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7

Fausto Sirotti
, Maurizio DeSantis
, Xiaofeng Jin
, Giorgio Rossi

Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

Abstract

The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi₂.

Original language	English
Pages (from-to)	800-805
Number of pages	6
Journal	Applied Surface Science
Volume	65-66
Issue number	C
DOIs	https://doi.org/10.1016/0169-4332(93)90759-5
Publication status	Published - 2 Mar 1993
Externally published	Yes

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@article{acce870c9aa843839da5b9e63249b479,

title = "Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7",

abstract = "The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.",

author = "Fausto Sirotti and Maurizio DeSantis and Xiaofeng Jin and Giorgio Rossi",

year = "1993",

month = mar,

day = "2",

doi = "10.1016/0169-4332(93)90759-5",

language = "English",

volume = "65-66",

pages = "800--805",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "C",

}

TY - JOUR

T1 - Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7

AU - Sirotti, Fausto

AU - DeSantis, Maurizio

AU - Jin, Xiaofeng

AU - Rossi, Giorgio

PY - 1993/3/2

Y1 - 1993/3/2

N2 - The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.

AB - The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.

UR - https://www.scopus.com/pages/publications/0027268853

U2 - 10.1016/0169-4332(93)90759-5

DO - 10.1016/0169-4332(93)90759-5

M3 - Article

AN - SCOPUS:0027268853

SN - 0169-4332

VL - 65-66

SP - 800

EP - 805

JO - Applied Surface Science

JF - Applied Surface Science

IS - C

ER -

Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7

Abstract

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