TY - JOUR
T1 - Elucidating Carrier Dynamics and Interface Engineering in Sb2S3
T2 - Toward Efficient Photoanode for Water Oxidation
AU - Tos, Irene Dei
AU - Simbula, Angelica
AU - Guerrero, Julian
AU - Dong, Thanh
AU - Subramaniam, Sownder
AU - Fuente, Beatriz de la
AU - Jose, Vishal K.
AU - Kuang, Yinghuan
AU - Aernouts, Tom
AU - Naghavi, Negar
AU - Shukla, Sudhanshu
AU - Vermang, Bart
N1 - Publisher Copyright:
© 2025 Wiley-VCH GmbH.
PY - 2025/7/17
Y1 - 2025/7/17
N2 - Conjugation of low-cost and high-performance semiconductors is essential in solar-driven photoelectrochemical (PEC) energy conversion. Sb2S3 is a wide-bandgap (≈1.7 eV) semiconductor with the potential to deliver a maximum photocurrent density of 24.5 mA cm−2, making it highly attractive for PEC water splitting applications. However, bulk Sb2S3 exhibits intrinsic recombination issues and low electron–hole separation, posing a limit to photocurrent generation. This study clarifies the carrier dynamics by ultrafast spectroscopy measurements and proposes the design of a heterojunction between Sb2S3 and SnO2, with suitable band-edge energy offset. The SnO2/Sb2S3 heterojunction enhances the charge separation efficiency, resulting in improvement of the photocurrent. The SnO2/Sb2S3 photoanode, fabricated entirely by vapor deposition processes, demonstrates photoelectrochemical water oxidation with a photocurrent density up to ≈3 mA cm−2 at 1.38 V versus RHE.
AB - Conjugation of low-cost and high-performance semiconductors is essential in solar-driven photoelectrochemical (PEC) energy conversion. Sb2S3 is a wide-bandgap (≈1.7 eV) semiconductor with the potential to deliver a maximum photocurrent density of 24.5 mA cm−2, making it highly attractive for PEC water splitting applications. However, bulk Sb2S3 exhibits intrinsic recombination issues and low electron–hole separation, posing a limit to photocurrent generation. This study clarifies the carrier dynamics by ultrafast spectroscopy measurements and proposes the design of a heterojunction between Sb2S3 and SnO2, with suitable band-edge energy offset. The SnO2/Sb2S3 heterojunction enhances the charge separation efficiency, resulting in improvement of the photocurrent. The SnO2/Sb2S3 photoanode, fabricated entirely by vapor deposition processes, demonstrates photoelectrochemical water oxidation with a photocurrent density up to ≈3 mA cm−2 at 1.38 V versus RHE.
KW - carrier dynamics
KW - charge transfer
KW - heterojunctions
KW - photoelectrochemical cells
KW - water splitting
UR - https://www.scopus.com/pages/publications/105008249416
U2 - 10.1002/cssc.202402764
DO - 10.1002/cssc.202402764
M3 - Article
AN - SCOPUS:105008249416
SN - 1864-5631
VL - 18
JO - ChemSusChem
JF - ChemSusChem
IS - 14
M1 - e202402764
ER -