Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state

Cheng Wang; Benjamin Lingnau; Kathy Lüdge; Jacky Even; Frederic Grillot

doi:10.1109/JQE.2014.2335811

Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state

Cheng Wang
, Benjamin Lingnau
, Kathy Lüdge
, Jacky Even
, Frederic Grillot

Research output: Contribution to journal › Article › peer-review

Abstract

The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55μm, more attractive for direct modulation in high-speed optical communication systems.

Original language	English
Article number	6848820
Pages (from-to)	723-731
Number of pages	9
Journal	IEEE Journal of Quantum Electronics
Volume	50
Issue number	9
DOIs	https://doi.org/10.1109/JQE.2014.2335811
Publication status	Published - 1 Jan 2014

Keywords

Semiconductor laser
modulation dynamics
quantum dot

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10.1109/JQE.2014.2335811

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title = "Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state",

abstract = "The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40\% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55μm, more attractive for direct modulation in high-speed optical communication systems.",

keywords = "Semiconductor laser, modulation dynamics, quantum dot",

author = "Cheng Wang and Benjamin Lingnau and Kathy L{\"u}dge and Jacky Even and Frederic Grillot",

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doi = "10.1109/JQE.2014.2335811",

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TY - JOUR

T1 - Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state

AU - Wang, Cheng

AU - Lingnau, Benjamin

AU - Lüdge, Kathy

AU - Even, Jacky

AU - Grillot, Frederic

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55μm, more attractive for direct modulation in high-speed optical communication systems.

AB - The modulation dynamics and the linewidth enhancement factor of excited-state (ES) lasing quantum dot (QD) semiconductor lasers are investigated through a set of improved rate equation model, in which the contribution of off-resonant states to the refractive index change is taken into account. The ES laser exhibits a broader modulation response associated with a much lower chirp-to-power ratio in comparison with the ground-state (GS) lasing laser. In addition, it is found that the laser emission in ES reduces the linewidth enhancement factor of QD lasers by about 40% than that in GS. These properties make the ES lasing devices, especially InAs/InP ones emitting at 1.55μm, more attractive for direct modulation in high-speed optical communication systems.

KW - Semiconductor laser

KW - modulation dynamics

KW - quantum dot

U2 - 10.1109/JQE.2014.2335811

DO - 10.1109/JQE.2014.2335811

M3 - Article

AN - SCOPUS:84905160805

SN - 0018-9197

VL - 50

SP - 723

EP - 731

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

M1 - 6848820

ER -

Enhanced dynamic performance of quantum dot semiconductor lasers operating on the excited state

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Keywords

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