Enhanced room-temperature piezoconductance of metal-semiconductor hybrid structures

A. C.H. Rowe; D. R. Hines; S. A. Solin

doi:10.1063/1.1600840

Enhanced room-temperature piezoconductance of metal-semiconductor hybrid structures

A. C.H. Rowe
, D. R. Hines
, S. A. Solin

Research output: Contribution to journal › Article › peer-review

Abstract

A study was performed on enhanced room-temperature piezoconductance of metal-semiconductor hybrid (MSH) structures in the presence of uniaxial tensile strain. It was found that the magnitude of the enhanced piezoconductance was more than five times greater than that of the homogeneous semiconductor alone. The magnitude of the enhanced piezoconductance was strongly dependent on both the properties and location of the metal-semiconductor interface.

Original language	English
Pages (from-to)	1160-1162
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	6
DOIs	https://doi.org/10.1063/1.1600840
Publication status	Published - 11 Aug 2003
Externally published	Yes

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title = "Enhanced room-temperature piezoconductance of metal-semiconductor hybrid structures",

abstract = "A study was performed on enhanced room-temperature piezoconductance of metal-semiconductor hybrid (MSH) structures in the presence of uniaxial tensile strain. It was found that the magnitude of the enhanced piezoconductance was more than five times greater than that of the homogeneous semiconductor alone. The magnitude of the enhanced piezoconductance was strongly dependent on both the properties and location of the metal-semiconductor interface.",

author = "Rowe, \{A. C.H.\} and Hines, \{D. R.\} and Solin, \{S. A.\}",

year = "2003",

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AU - Hines, D. R.

AU - Solin, S. A.

PY - 2003/8/11

Y1 - 2003/8/11

N2 - A study was performed on enhanced room-temperature piezoconductance of metal-semiconductor hybrid (MSH) structures in the presence of uniaxial tensile strain. It was found that the magnitude of the enhanced piezoconductance was more than five times greater than that of the homogeneous semiconductor alone. The magnitude of the enhanced piezoconductance was strongly dependent on both the properties and location of the metal-semiconductor interface.

AB - A study was performed on enhanced room-temperature piezoconductance of metal-semiconductor hybrid (MSH) structures in the presence of uniaxial tensile strain. It was found that the magnitude of the enhanced piezoconductance was more than five times greater than that of the homogeneous semiconductor alone. The magnitude of the enhanced piezoconductance was strongly dependent on both the properties and location of the metal-semiconductor interface.

U2 - 10.1063/1.1600840

DO - 10.1063/1.1600840

M3 - Article

AN - SCOPUS:0042926656

SN - 0003-6951

VL - 83

SP - 1160

EP - 1162

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Enhanced room-temperature piezoconductance of metal-semiconductor hybrid structures

Abstract

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