Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Jean Maxime Sarraute; Kevin Schires; Sophie Larochelle; Frédéric Grillot

doi:10.1109/JSTQE.2015.2445876

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Jean Maxime Sarraute, Kevin Schires, Sophie Larochelle, Frédéric Grillot

Research output: Contribution to journal › Article › peer-review

Abstract

The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

Original language	English
Article number	07124456
Pages (from-to)	575-582
Number of pages	8
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	21
Issue number	6
DOIs	https://doi.org/10.1109/JSTQE.2015.2445876
Publication status	Published - 1 Nov 2015
Externally published	Yes

Keywords

Semiconductor laser
bandwidth
gain lever
modulation response
optical injection

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10.1109/JSTQE.2015.2445876

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title = "Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever",

abstract = "The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.",

keywords = "Semiconductor laser, bandwidth, gain lever, modulation response, optical injection",

author = "Sarraute, \{Jean Maxime\} and Kevin Schires and Sophie Larochelle and Fr{\'e}d{\'e}ric Grillot",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/JSTQE.2015.2445876",

language = "English",

volume = "21",

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journal = "IEEE Journal on Selected Topics in Quantum Electronics",

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T1 - Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

AU - Sarraute, Jean Maxime

AU - Schires, Kevin

AU - Larochelle, Sophie

AU - Grillot, Frédéric

PY - 2015/11/1

Y1 - 2015/11/1

N2 - The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

AB - The modulation response of an optically injected gain-lever semiconductor laser is studied for the first time using small-signal analysis of a rate equation model. Calculations show that a gain-lever laser operating under medium to strong optical injection provides a unique and robust configuration for ultralarge bandwidth enhancement. Modulation bandwidths above nine times the relaxation oscillation frequency of the free-running laser can be reached using injection-locking conditions that are reasonable for practical applications. This theoretical work is of prime importance for the development of directly modulated broadband optical sources for high-speed operation at 40 Gb/s and beyond.

KW - Semiconductor laser

KW - bandwidth

KW - gain lever

KW - modulation response

KW - optical injection

U2 - 10.1109/JSTQE.2015.2445876

DO - 10.1109/JSTQE.2015.2445876

M3 - Article

AN - SCOPUS:84937232514

SN - 1077-260X

VL - 21

SP - 575

EP - 582

JO - IEEE Journal on Selected Topics in Quantum Electronics

JF - IEEE Journal on Selected Topics in Quantum Electronics

IS - 6

M1 - 07124456

ER -

Enhancement of the Modulation Dynamics of an Optically Injection-Locked Semiconductor Laser Using Gain Lever

Abstract

Keywords

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