EPR on radiation-induced defects in SiO2

Antonino Alessi; Simonpietro Agnello; Gianpiero Buscarino; Yuanming Pan; Rudolf I. Mashkovtsev

doi:10.1007/978-3-319-09216-4_7

EPR on radiation-induced defects in SiO₂

Antonino Alessi
, Simonpietro Agnello
, Gianpiero Buscarino
, Yuanming Pan
, Rudolf I. Mashkovtsev

University of Palermo
University of Saskatchewan
V.S. Sobolev Institute of Geology and Mineralogy of the Siberian Branch of the RAS

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

31 Citations (Scopus)

Abstract

Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO₂) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO₂ (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO₂), although significant differences are common.

Original language	English
Title of host publication	Applications of EPR in Radiation Research
Publisher	Springer International Publishing
Pages	255-295
Number of pages	41
ISBN (Electronic)	9783319092164
ISBN (Print)	3319092154, 9783319092157
DOIs	https://doi.org/10.1007/978-3-319-09216-4_7
Publication status	Published - 1 Jun 2014
Externally published	Yes

Keywords

Coordinate system
Dynamic properties
Electronic structures
Impurity defects
Multi-frequency EPR
Oxygen vacancy
Pulse ENDOR
Pulse ESEEM
Silicon vacancy
Single-crystal and glass EPR

Access to Document

10.1007/978-3-319-09216-4_7

Cite this

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title = "EPR on radiation-induced defects in SiO2",

abstract = "Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.",

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T1 - EPR on radiation-induced defects in SiO2

AU - Alessi, Antonino

AU - Agnello, Simonpietro

AU - Buscarino, Gianpiero

AU - Pan, Yuanming

AU - Mashkovtsev, Rudolf I.

PY - 2014/6/1

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N2 - Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.

AB - Continuous-wave electron paramagnetic resonance (EPR) spectroscopy has been the technique of choice for the studies of radiation-induced defects in silica (SiO2) for 60 years, and has recently been expanded to include more sophisticated techniques such as high-frequency EPR, pulse electron nuclear double resonance (ENDOR), and pulse electron spin echo envelope modulation (ESEEM) spectroscopy. Structural models of radiation-induced defects obtained from single-crystal EPR analyses of crystalline SiO2 (α-quartz) are often applicable to their respective analogues in amorphous silica (a-SiO2), although significant differences are common.

KW - Coordinate system

KW - Dynamic properties

KW - Electronic structures

KW - Impurity defects

KW - Multi-frequency EPR

KW - Oxygen vacancy

KW - Pulse ENDOR

KW - Pulse ESEEM

KW - Silicon vacancy

KW - Single-crystal and glass EPR

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DO - 10.1007/978-3-319-09216-4_7

M3 - Chapter

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SN - 3319092154

SN - 9783319092157

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BT - Applications of EPR in Radiation Research

PB - Springer International Publishing