TY - JOUR
T1 - Erbium-doped yttria thin films prepared by metal organic decomposition for up-conversion
AU - Andriamiadamanana, Christian
AU - Ibanez, Alain
AU - Ferrier, Alban
AU - Joudrier, Anne Laure
AU - Lombez, Laurent
AU - Liotaud, Marine
AU - Guillemoles, Jean François
AU - Pellé, Fabienne
PY - 2013/6/30
Y1 - 2013/6/30
N2 - Er:Y2O3 thin films have been obtained by spin coating process. Precursor solutions were prepared using nitrates as metal precursors and water as solvent. Citric, malic, and lactic acids were used as complexant. Investigations on resin compositions and on their coating parameters have been made, leading to crack-free thin films with citric and malic acids after direct deposition under standard room conditions (temperature, pressure and atmosphere). The films are homogeneous with a low root mean square roughness, less than 2.5 nm. We demonstrated that the nature of the carboxylic acid is the key point to obtain high quality thin films on silicon substrates from 20 nm up to 230 nm thick, while the film porosity is related to the number of carbon in the acid molecule. All films exhibit up-conversion luminescence in the near infrared and in the visible range, under 1.54 μm laser excitation. Furthermore, the up-conversion luminescence intensity increases with the applied annealing temperature on the films, due to an improvement of their crystallinity and to the total decomposition of organics.
AB - Er:Y2O3 thin films have been obtained by spin coating process. Precursor solutions were prepared using nitrates as metal precursors and water as solvent. Citric, malic, and lactic acids were used as complexant. Investigations on resin compositions and on their coating parameters have been made, leading to crack-free thin films with citric and malic acids after direct deposition under standard room conditions (temperature, pressure and atmosphere). The films are homogeneous with a low root mean square roughness, less than 2.5 nm. We demonstrated that the nature of the carboxylic acid is the key point to obtain high quality thin films on silicon substrates from 20 nm up to 230 nm thick, while the film porosity is related to the number of carbon in the acid molecule. All films exhibit up-conversion luminescence in the near infrared and in the visible range, under 1.54 μm laser excitation. Furthermore, the up-conversion luminescence intensity increases with the applied annealing temperature on the films, due to an improvement of their crystallinity and to the total decomposition of organics.
KW - Metal organic decomposition
KW - Oxide
KW - Spin-coating
KW - Thin film
KW - Up-conversion
KW - YO
U2 - 10.1016/j.tsf.2013.04.093
DO - 10.1016/j.tsf.2013.04.093
M3 - Article
AN - SCOPUS:84878283322
SN - 0040-6090
VL - 537
SP - 42
EP - 48
JO - Thin Solid Films
JF - Thin Solid Films
ER -