Erratum: Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor (Physical Review Letters (2009) 102 (036601))

M. Tran; H. Jaffrès; C. Deranlot; J. M. George; A. Fert; A. Miard; A. Lemaître

doi:10.1103/PhysRevLett.107.249901

Erratum: Enhancement of the spin accumulation at the interface between a spin-polarized tunnel junction and a semiconductor (Physical Review Letters (2009) 102 (036601))

M. Tran
, H. Jaffrès
, C. Deranlot
, J. M. George
, A. Fert
, A. Miard
, A. Lemaître

École Polytechnique

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	249901
Journal	Physical Review Letters
Volume	107
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevLett.107.249901
Publication status	Published - 6 Dec 2011

Access to Document

10.1103/PhysRevLett.107.249901

Cite this

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author = "M. Tran and H. Jaffr{\`e}s and C. Deranlot and George, \{J. M.\} and A. Fert and A. Miard and A. Lema{\^i}tre",

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AU - Jaffrès, H.

AU - Deranlot, C.

AU - George, J. M.

AU - Fert, A.

AU - Miard, A.

AU - Lemaître, A.

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DO - 10.1103/PhysRevLett.107.249901

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