Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution

Y. Robach; M. Phaner; C. De Villeneuve; L. Porte

doi:10.1063/1.108123

Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H₂SO₄ solution

Y. Robach
, M. Phaner
, C. De Villeneuve
, L. Porte

LTDS UMR 5513 - Ecole Centrale de Lyon

Research output: Contribution to journal › Article › peer-review

Abstract

The topography of different technological InP substrates has been studied by scanning tunneling microscopy in 0.25M H₂SO₄, under potentiostatic control. For the best surface preparation corresponding to an "epiready" InP surface, a rms roughness of ∼15-20 Å was measured, approximately ten times higher as for Si surfaces. Finally, it was shown that the growth of a chemical native oxide in HNO₃ and its subsequent removal in a dilute HF solution led to a significant improvement of the InP surface topography.

Original language	English
Pages (from-to)	2551-2553
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	21
DOIs	https://doi.org/10.1063/1.108123
Publication status	Published - 1 Dec 1992
Externally published	Yes

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title = "Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution",

abstract = "The topography of different technological InP substrates has been studied by scanning tunneling microscopy in 0.25M H2SO4, under potentiostatic control. For the best surface preparation corresponding to an {"}epiready{"} InP surface, a rms roughness of ∼15-20 {\AA} was measured, approximately ten times higher as for Si surfaces. Finally, it was shown that the growth of a chemical native oxide in HNO3 and its subsequent removal in a dilute HF solution led to a significant improvement of the InP surface topography.",

author = "Y. Robach and M. Phaner and \{De Villeneuve\}, C. and L. Porte",

year = "1992",

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doi = "10.1063/1.108123",

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volume = "61",

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journal = "Applied Physics Letters",

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T1 - Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution

AU - Robach, Y.

AU - Phaner, M.

AU - De Villeneuve, C.

AU - Porte, L.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - The topography of different technological InP substrates has been studied by scanning tunneling microscopy in 0.25M H2SO4, under potentiostatic control. For the best surface preparation corresponding to an "epiready" InP surface, a rms roughness of ∼15-20 Å was measured, approximately ten times higher as for Si surfaces. Finally, it was shown that the growth of a chemical native oxide in HNO3 and its subsequent removal in a dilute HF solution led to a significant improvement of the InP surface topography.

AB - The topography of different technological InP substrates has been studied by scanning tunneling microscopy in 0.25M H2SO4, under potentiostatic control. For the best surface preparation corresponding to an "epiready" InP surface, a rms roughness of ∼15-20 Å was measured, approximately ten times higher as for Si surfaces. Finally, it was shown that the growth of a chemical native oxide in HNO3 and its subsequent removal in a dilute HF solution led to a significant improvement of the InP surface topography.

U2 - 10.1063/1.108123

DO - 10.1063/1.108123

M3 - Article

AN - SCOPUS:0342824950

SN - 0003-6951

VL - 61

SP - 2551

EP - 2553

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution

Abstract

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Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H₂SO₄ solution