Evidence for hydrogen incorporation during porous silicon formation

P. Allongue; C. Henry De Villeneuve; L. Pinsard; M. C. Bernard

doi:10.1063/1.114702

Evidence for hydrogen incorporation during porous silicon formation

P. Allongue
, C. Henry De Villeneuve
, L. Pinsard
, M. C. Bernard

Laboratoire de Physique de Liquides et Électrochimie

Research output: Contribution to journal › Article › peer-review

Abstract

The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10^-13 and 10^-11cm² s ^-1. The interplay of H permeation with porous silicon layer formation is discussed.

Original language	English
Pages (from-to)	941
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114702
Publication status	Published - 1 Jan 1995
Externally published	Yes

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@article{2dbcabee9ce647fc9103b68e1a35caef,

title = "Evidence for hydrogen incorporation during porous silicon formation",

abstract = "The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10-13 and 10-11cm2 s -1. The interplay of H permeation with porous silicon layer formation is discussed.",

author = "P. Allongue and \{Henry De Villeneuve\}, C. and L. Pinsard and Bernard, \{M. C.\}",

year = "1995",

month = jan,

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doi = "10.1063/1.114702",

language = "English",

volume = "67",

pages = "941",

journal = "Applied Physics Letters",

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T1 - Evidence for hydrogen incorporation during porous silicon formation

AU - Allongue, P.

AU - Henry De Villeneuve, C.

AU - Pinsard, L.

AU - Bernard, M. C.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10-13 and 10-11cm2 s -1. The interplay of H permeation with porous silicon layer formation is discussed.

AB - The incorporation of hydrogen into Si, under different electrochemical conditions including anodization in fluoride solutions where porous silicon is formed, is studied by NRA and in situ capacitance measurements. Results suggest a large near surface concentration of H whilst simulation show that the maximum penetration depth is governed by volume diffusion of H and material removal. Diffusion coefficients are found to be dependent on electrochemical conditions and ranged between 10-13 and 10-11cm2 s -1. The interplay of H permeation with porous silicon layer formation is discussed.

U2 - 10.1063/1.114702

DO - 10.1063/1.114702

M3 - Article

AN - SCOPUS:36449004593

SN - 0003-6951

VL - 67

SP - 941

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Evidence for hydrogen incorporation during porous silicon formation

Abstract

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