Abstract
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
| Original language | English |
|---|---|
| Article number | 091102 |
| Journal | Applied Physics Letters |
| Volume | 116 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2 Mar 2020 |
Fingerprint
Dive into the research topics of 'Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver