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Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure

  • F. Cadiz
  • , C. Robert
  • , E. Courtade
  • , M. Manca
  • , L. Martinelli
  • , T. Taniguchi
  • , K. Watanabe
  • , T. Amand
  • , A. C.H. Rowe
  • , D. Paget
  • , B. Urbaszek
  • , X. Marie
  • Université Paris-Saclay
  • Université Paul Sabatier
  • National Institute for Materials Science

Research output: Contribution to journalArticlepeer-review

Abstract

We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an exciton diffusion length of LX = 0.36 ± 0.02 μm and an exciton diffusion coefficient of DX = 14.5 ± 2 cm2/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species: bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of LXD=1.5±0.02 μm.

Original languageEnglish
Article number152106
JournalApplied Physics Letters
Volume112
Issue number15
DOIs
Publication statusPublished - 9 Apr 2018
Externally publishedYes

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