Exciton-exciton annihilation in hBN

A. Plaud; L. Schué; K. Watanabe; T. Taniguchi; F. Fossard; F. Ducastelle; A. Loiseau; J. Barjon

doi:10.1063/1.5090218

Exciton-exciton annihilation in hBN

A. Plaud
, L. Schué
, K. Watanabe
, T. Taniguchi
, F. Fossard
, F. Ducastelle
, A. Loiseau
, J. Barjon

Research output: Contribution to journal › Article › peer-review

Abstract

Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10^-6cm³ s^-1 at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials.

Original language	English
Article number	232103
Journal	Applied Physics Letters
Volume	114
Issue number	23
DOIs	https://doi.org/10.1063/1.5090218
Publication status	Published - 10 Jun 2019
Externally published	Yes

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10.1063/1.5090218

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title = "Exciton-exciton annihilation in hBN",

abstract = "Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10-6cm3 s-1 at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials.",

author = "A. Plaud and L. Schu{\'e} and K. Watanabe and T. Taniguchi and F. Fossard and F. Ducastelle and A. Loiseau and J. Barjon",

note = "Publisher Copyright: {\textcopyright} 2019 Author(s).",

year = "2019",

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doi = "10.1063/1.5090218",

language = "English",

volume = "114",

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TY - JOUR

T1 - Exciton-exciton annihilation in hBN

AU - Plaud, A.

AU - Schué, L.

AU - Watanabe, K.

AU - Taniguchi, T.

AU - Fossard, F.

AU - Ducastelle, F.

AU - Loiseau, A.

AU - Barjon, J.

PY - 2019/6/10

Y1 - 2019/6/10

N2 - Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10-6cm3 s-1 at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials.

AB - Known as a prominent recombination path at high excitation densities, exciton-exciton annihilation (EEA) is evidenced in bulk hexagonal boron nitride by cathodoluminescence at low temperature. Thanks to a careful tuning of the exciton density by varying either the current or the focus of the incident electron beam, we could estimate an EEA rate of 2 × 10-6cm3 s-1 at T = 10 K, the highest reported so far for a bulk semiconductor. Expected to be even stronger in nanotubes or atomic layers, EEA probably contributes to the luminescence quenching observed in low-dimensionality BN materials.

U2 - 10.1063/1.5090218

DO - 10.1063/1.5090218

M3 - Article

AN - SCOPUS:85067258642

SN - 0003-6951

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232103

ER -

Exciton-exciton annihilation in hBN

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