Abstract
The electron energy loss spectra (EELS) of silicon including local-field effects, GW corrections, and excitonic effects, were calculated. The inclusion of excitonic effects improved the results with respect to both the RPA, and more drastically, with respect to the GW calculations.
| Original language | English |
|---|---|
| Pages (from-to) | 5962-5965 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 86 |
| Issue number | 26 I |
| DOIs | |
| Publication status | Published - 25 Jun 2001 |