Experimental characterization of power transistors for linearity optimization

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, different techniques are combined in a unique characterization system dedicated for power transistor linearity improvement. Successive optimizations are performed using source-pull/load-pull techniques at the fundamental and base-band frequencies associated with an instantaneous memoryless base-band predistortion procedure. Measurement results performed at 1.575 GHz on a MESFET power transistor biased in class AB for a QPSK modulated signal, show that fundamental frequency source-pull measurements lead to an ACPR variation equal to 3 dB. Moreover, the influence of baseband impedance on ACPR and EVM is found to be 15 dB and 4.5 points, respectively. Finally, instantaneous memoryless baseband predistortion improves ACPR and EVM values by 5 dB and 1 point, respectively.

Original languageEnglish
Title of host publicationProceedings of the 38th European Microwave Conference, EuMC 2008
Pages242-245
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2008
Event38th European Microwave Conference, EuMC 2008 - Amsterdam, Netherlands
Duration: 27 Oct 200831 Oct 2008

Publication series

NameProceedings of the 38th European Microwave Conference, EuMC 2008

Conference

Conference38th European Microwave Conference, EuMC 2008
Country/TerritoryNetherlands
CityAmsterdam
Period27/10/0831/10/08

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