Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations

Ghaya Baili; Loïc Morvan; Mehdi Alouini; Fabien Bretenaker; Isabelle Sagnes; Arnaud Garnache

doi:10.1364/OL.34.003421

Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations

Ghaya Baili
, Loïc Morvan
, Mehdi Alouini
, Fabien Bretenaker
, Isabelle Sagnes
, Arnaud Garnache

Thales Research & Technology
Centre national de la recherche scientifique
Laboratoire Aimé Cotton
IES Institut d'Electronique et des Systèmes

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

Tunable dual-frequency oscillation is demonstrated in a vertical external-cavity surface-emitting laser. Simultaneous and robust oscillation of the two orthogonally polarized eigenstates is achieved by reducing their overlap in the optical active medium. The class-A dynamics of this laser, free of relaxation oscillations, enables one to suppress the electrical phase noise in excess that is usually observed in the vicinity of the beat note.

Original language	English
Pages (from-to)	3421-3423
Number of pages	3
Journal	Optics Letters
Volume	34
Issue number	21
DOIs	https://doi.org/10.1364/OL.34.003421
Publication status	Published - 1 Nov 2009
Externally published	Yes

Access to Document

10.1364/OL.34.003421

Cite this

@article{306a21de435e42c689d1a0ab864c7df0,

title = "Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations",

abstract = "Tunable dual-frequency oscillation is demonstrated in a vertical external-cavity surface-emitting laser. Simultaneous and robust oscillation of the two orthogonally polarized eigenstates is achieved by reducing their overlap in the optical active medium. The class-A dynamics of this laser, free of relaxation oscillations, enables one to suppress the electrical phase noise in excess that is usually observed in the vicinity of the beat note.",

author = "Ghaya Baili and Lo{\"i}c Morvan and Mehdi Alouini and Fabien Bretenaker and Isabelle Sagnes and Arnaud Garnache",

year = "2009",

month = nov,

day = "1",

doi = "10.1364/OL.34.003421",

language = "English",

volume = "34",

pages = "3421--3423",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

number = "21",

}

TY - JOUR

T1 - Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations

AU - Baili, Ghaya

AU - Morvan, Loïc

AU - Alouini, Mehdi

AU - Bretenaker, Fabien

AU - Sagnes, Isabelle

AU - Garnache, Arnaud

PY - 2009/11/1

Y1 - 2009/11/1

N2 - Tunable dual-frequency oscillation is demonstrated in a vertical external-cavity surface-emitting laser. Simultaneous and robust oscillation of the two orthogonally polarized eigenstates is achieved by reducing their overlap in the optical active medium. The class-A dynamics of this laser, free of relaxation oscillations, enables one to suppress the electrical phase noise in excess that is usually observed in the vicinity of the beat note.

AB - Tunable dual-frequency oscillation is demonstrated in a vertical external-cavity surface-emitting laser. Simultaneous and robust oscillation of the two orthogonally polarized eigenstates is achieved by reducing their overlap in the optical active medium. The class-A dynamics of this laser, free of relaxation oscillations, enables one to suppress the electrical phase noise in excess that is usually observed in the vicinity of the beat note.

U2 - 10.1364/OL.34.003421

DO - 10.1364/OL.34.003421

M3 - Article

AN - SCOPUS:70350655579

SN - 0146-9592

VL - 34

SP - 3421

EP - 3423

JO - Optics Letters

JF - Optics Letters

IS - 21

ER -

Experimental demonstration of a tunable dual-frequency semiconductor laser free of relaxation oscillations

Abstract

Access to Document

Fingerprint

Cite this