Experimental evidence for the annealing of surface defects in a-Si:H during deposition

J. P. Kleider; C. Longeaud; P. Roca I Cabarrocas

doi:10.1063/1.352079

Experimental evidence for the annealing of surface defects in a-Si:H during deposition

J. P. Kleider
, C. Longeaud
, P. Roca I Cabarrocas

Université Paris-Sud 11

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The modulated photocurrent technique performed under different illumination conditions is used to derive a spatial spectroscopy of the defect distribution in hydrogenated amorphous silicon. The results show conclusive evidence for a defect density profile extending from the a-Si:H/air interface toward the bulk in samples deposited by rf glow discharge under standard conditions at low substrate temperature (373 K). This spatial inhomogeneity in defect density almost completely disappears after annealing at 473 K and also seems absent if the material is deposited at higher temperature (523 K). These results are supported by a model in which the surface defects, buried during a-Si:H deposition, are annealed out in a thermally activated process.

Original language	English
Pages (from-to)	4727-4731
Number of pages	5
Journal	Journal of Applied Physics
Volume	72
Issue number	10
DOIs	https://doi.org/10.1063/1.352079
Publication status	Published - 1 Jan 1992

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title = "Experimental evidence for the annealing of surface defects in a-Si:H during deposition",

abstract = "The modulated photocurrent technique performed under different illumination conditions is used to derive a spatial spectroscopy of the defect distribution in hydrogenated amorphous silicon. The results show conclusive evidence for a defect density profile extending from the a-Si:H/air interface toward the bulk in samples deposited by rf glow discharge under standard conditions at low substrate temperature (373 K). This spatial inhomogeneity in defect density almost completely disappears after annealing at 473 K and also seems absent if the material is deposited at higher temperature (523 K). These results are supported by a model in which the surface defects, buried during a-Si:H deposition, are annealed out in a thermally activated process.",

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AU - Kleider, J. P.

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AU - Roca I Cabarrocas, P.

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N2 - The modulated photocurrent technique performed under different illumination conditions is used to derive a spatial spectroscopy of the defect distribution in hydrogenated amorphous silicon. The results show conclusive evidence for a defect density profile extending from the a-Si:H/air interface toward the bulk in samples deposited by rf glow discharge under standard conditions at low substrate temperature (373 K). This spatial inhomogeneity in defect density almost completely disappears after annealing at 473 K and also seems absent if the material is deposited at higher temperature (523 K). These results are supported by a model in which the surface defects, buried during a-Si:H deposition, are annealed out in a thermally activated process.

AB - The modulated photocurrent technique performed under different illumination conditions is used to derive a spatial spectroscopy of the defect distribution in hydrogenated amorphous silicon. The results show conclusive evidence for a defect density profile extending from the a-Si:H/air interface toward the bulk in samples deposited by rf glow discharge under standard conditions at low substrate temperature (373 K). This spatial inhomogeneity in defect density almost completely disappears after annealing at 473 K and also seems absent if the material is deposited at higher temperature (523 K). These results are supported by a model in which the surface defects, buried during a-Si:H deposition, are annealed out in a thermally activated process.

U2 - 10.1063/1.352079

DO - 10.1063/1.352079

M3 - Article

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EP - 4731

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

ER -

Experimental evidence for the annealing of surface defects in a-Si:H during deposition

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