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Experimental evidence for the effect of nonequilibrium acoustic plasmons on carrier relaxation in bulk semiconductors

  • J. F. Lampin
  • , F. X. Camescasse
  • , A. Alexandrou
  • , M. Bonitz
  • , V. Thierry-Mieg

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate experimentally the role of preexisting populations on the relaxation of nonequilibrium carriers in bulk semiconductors: A substantial acceleration is observed for cold preexcited carriers and a slowing down for hot equilibrium carriers. Experiments in doped samples show that holes are predominantly responsible for the acceleration of the thermalization. The observed acceleration (slowing down) is readily explained by favorable (unfavorable) conditions for the excitation of weakly damped nonequilibrium acoustic plasmons.

Original languageEnglish
Pages (from-to)R8453-R8456
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number12
DOIs
Publication statusPublished - 1 Jan 1999

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