Experimental study of disorder and defects in undoped a-Si:H as a function of annealing and hydrogen evolution

  • K. Zellama
  • , J. H. von Bardeleben
  • , V. Quillet
  • , Y. Bouizem
  • , P. Sládek
  • , M. L. Thèye
  • , P. Roca i Cabarrocas

Research output: Contribution to journalArticlepeer-review

Abstract

Information on the incorporation of hydrogen and its effects on the disorder and the defects in undoped PECVD a-Si:H films deposited under different conditions is gained from systematicannealing studies up to 500-600°C. The results reveal a better bonded hydrogen stability in he samples deposited at high rate, related to their particular microstructure.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume164-166
Issue numberPART 1
DOIs
Publication statusPublished - 2 Dec 1993

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