Abstract
Information on the incorporation of hydrogen and its effects on the disorder and the defects in undoped PECVD a-Si:H films deposited under different conditions is gained from systematicannealing studies up to 500-600°C. The results reveal a better bonded hydrogen stability in he samples deposited at high rate, related to their particular microstructure.
| Original language | English |
|---|---|
| Pages (from-to) | 285-288 |
| Number of pages | 4 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 164-166 |
| Issue number | PART 1 |
| DOIs | |
| Publication status | Published - 2 Dec 1993 |
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