Abstract
An experimental study of the delayed threshold phenomenon in a Vertical Extended Cavity Semiconductor Emitting Laser is carried out. Under modulation of the pump power, the laser intensity exhibits a time delay in the vicinity of the threshold. The evolution of this delay is measured as a function of the modulation frequency and is proved to follow the predicted scaling law. A model based on the rate equations is derived and used to analyze the experimental observations. A frequency variation of the laser around the delayed threshold and induced by the phase-amplitude coupling is predicted and estimated.
| Original language | English |
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| Article number | 10501 |
| Journal | EPJ Applied Physics |
| Volume | 58 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Apr 2012 |
| Externally published | Yes |