Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

F. Charlet; C. Bermond; S. Putot; G. Le Carval; B. Flechet

Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

F. Charlet
, C. Bermond
, S. Putot
, G. Le Carval
, B. Flechet

LETI (CEA-Technologies Avancees)

Research output: Contribution to conference › Paper › peer-review

Abstract

We present a new simulation method for a fast and efficient extraction of frequency dependant R,L,C,G parameters in 2D transmission lines structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numeric tools (fictitious domain approach, fast solver, domain decomposition). It only needs an unstructured mesh of the conductors boundaries and is very efficient in memory and CPU time. The results are validated on test structures with an original method of measurements and characterization.

Original language	English
Pages	87-89
Number of pages	3
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA Duration: 6 Sept 2000 → 8 Sept 2000

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
City	Seattle, WA, USA
Period	6/09/00 → 8/09/00

Cite this

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title = "Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools",

abstract = "We present a new simulation method for a fast and efficient extraction of frequency dependant R,L,C,G parameters in 2D transmission lines structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numeric tools (fictitious domain approach, fast solver, domain decomposition). It only needs an unstructured mesh of the conductors boundaries and is very efficient in memory and CPU time. The results are validated on test structures with an original method of measurements and characterization.",

author = "F. Charlet and C. Bermond and S. Putot and \{Le Carval\}, G. and B. Flechet",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "87--89",

note = "International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 06-09-2000 Through 08-09-2000",

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TY - CONF

T1 - Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

AU - Charlet, F.

AU - Bermond, C.

AU - Putot, S.

AU - Le Carval, G.

AU - Flechet, B.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We present a new simulation method for a fast and efficient extraction of frequency dependant R,L,C,G parameters in 2D transmission lines structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numeric tools (fictitious domain approach, fast solver, domain decomposition). It only needs an unstructured mesh of the conductors boundaries and is very efficient in memory and CPU time. The results are validated on test structures with an original method of measurements and characterization.

AB - We present a new simulation method for a fast and efficient extraction of frequency dependant R,L,C,G parameters in 2D transmission lines structures embedded in a multilayered dielectric environment. Our method is based on two variational finite element formulations and use very efficient numeric tools (fictitious domain approach, fast solver, domain decomposition). It only needs an unstructured mesh of the conductors boundaries and is very efficient in memory and CPU time. The results are validated on test structures with an original method of measurements and characterization.

UR - https://www.scopus.com/pages/publications/0033725015

M3 - Paper

AN - SCOPUS:0033725015

SP - 87

EP - 89

T2 - International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 6 September 2000 through 8 September 2000

ER -

Extraction of (R,L,C,G) interconnect parameters in 2D transmission lines using fast and efficient numerical tools

Abstract

Conference

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