Fabrication of metallic oxide nanowires

F. Gaucher; A. Pautrat; S. Autier-Laurent; C. David; L. E. Calvet; Ph Lecoeur; A. M. Haghiri-Gosnet

doi:10.1016/j.mee.2008.12.095

Fabrication of metallic oxide nanowires

F. Gaucher
, A. Pautrat
, S. Autier-Laurent
, C. David
, L. E. Calvet
, Ph Lecoeur
, A. M. Haghiri-Gosnet

Centre national de la recherche scientifique
UMR 6508

Research output: Contribution to journal › Article › peer-review

Abstract

Micron length nanowires with varying widths were patterned in half-metallic La_2/3Sr_1/3MnO₃ (LSMO) thin films of different thicknesses, using a thin negative-tone electron beam lithography (EBL) process. Patterns were realized in the high resolution hydrogen silsesquioxane (HSQ) inorganic resist and successfully transferred to the manganite via an energetic argon ion beam etching (IBE). We have obtained wires with widths down to 65 nm and length up to 4 μm that exhibit transport properties comparable with those of unpatterned thin films.

Original language	English
Pages (from-to)	820-823
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2008.12.095
Publication status	Published - 1 Apr 2009

Keywords

Electron beam lithography
Half-metal
Negative resist

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10.1016/j.mee.2008.12.095

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title = "Fabrication of metallic oxide nanowires",

abstract = "Micron length nanowires with varying widths were patterned in half-metallic La2/3Sr1/3MnO3 (LSMO) thin films of different thicknesses, using a thin negative-tone electron beam lithography (EBL) process. Patterns were realized in the high resolution hydrogen silsesquioxane (HSQ) inorganic resist and successfully transferred to the manganite via an energetic argon ion beam etching (IBE). We have obtained wires with widths down to 65 nm and length up to 4 μm that exhibit transport properties comparable with those of unpatterned thin films.",

keywords = "Electron beam lithography, Half-metal, Negative resist",

author = "F. Gaucher and A. Pautrat and S. Autier-Laurent and C. David and Calvet, \{L. E.\} and Ph Lecoeur and Haghiri-Gosnet, \{A. M.\}",

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doi = "10.1016/j.mee.2008.12.095",

language = "English",

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journal = "Microelectronic Engineering",

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T1 - Fabrication of metallic oxide nanowires

AU - Gaucher, F.

AU - Pautrat, A.

AU - Autier-Laurent, S.

AU - David, C.

AU - Calvet, L. E.

AU - Lecoeur, Ph

AU - Haghiri-Gosnet, A. M.

PY - 2009/4/1

Y1 - 2009/4/1

N2 - Micron length nanowires with varying widths were patterned in half-metallic La2/3Sr1/3MnO3 (LSMO) thin films of different thicknesses, using a thin negative-tone electron beam lithography (EBL) process. Patterns were realized in the high resolution hydrogen silsesquioxane (HSQ) inorganic resist and successfully transferred to the manganite via an energetic argon ion beam etching (IBE). We have obtained wires with widths down to 65 nm and length up to 4 μm that exhibit transport properties comparable with those of unpatterned thin films.

AB - Micron length nanowires with varying widths were patterned in half-metallic La2/3Sr1/3MnO3 (LSMO) thin films of different thicknesses, using a thin negative-tone electron beam lithography (EBL) process. Patterns were realized in the high resolution hydrogen silsesquioxane (HSQ) inorganic resist and successfully transferred to the manganite via an energetic argon ion beam etching (IBE). We have obtained wires with widths down to 65 nm and length up to 4 μm that exhibit transport properties comparable with those of unpatterned thin films.

KW - Electron beam lithography

KW - Half-metal

KW - Negative resist

UR - https://www.scopus.com/pages/publications/67349247815

U2 - 10.1016/j.mee.2008.12.095

DO - 10.1016/j.mee.2008.12.095

M3 - Article

AN - SCOPUS:67349247815

SN - 0167-9317

VL - 86

SP - 820

EP - 823

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-6

ER -

Fabrication of metallic oxide nanowires

Abstract

Keywords

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