Fast and accurate computation of interconnect capacitance

S. Putot; F. Charlet; P. Witomski

Fast and accurate computation of interconnect capacitance

S. Putot
, F. Charlet
, P. Witomski

LETI (CEA-Technologies Avancees)

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a new simulation tool for efficient extraction of 3D capacitance matrix in interconnect structures embedded in a multilayered dielectric environment. We use a fictitious domain method, which replaces the initial problem on a complex geometry by a problem on a simple shape domain embedding the initial domain, and is consequently ideally suited for the treatment of complex geometries. Numerical results confirm that this method is more efficient, both in cpu time and memory, than a finite elements or a boundary elements method.

Original language	English
Pages (from-to)	893-896
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

Cite this

@article{da52ba3185fd4d8d80181cc4af1f38ae,

title = "Fast and accurate computation of interconnect capacitance",

abstract = "We present a new simulation tool for efficient extraction of 3D capacitance matrix in interconnect structures embedded in a multilayered dielectric environment. We use a fictitious domain method, which replaces the initial problem on a complex geometry by a problem on a simple shape domain embedding the initial domain, and is consequently ideally suited for the treatment of complex geometries. Numerical results confirm that this method is more efficient, both in cpu time and memory, than a finite elements or a boundary elements method.",

author = "S. Putot and F. Charlet and P. Witomski",

year = "1999",

month = dec,

day = "1",

language = "English",

pages = "893--896",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

note = "1999 IEEE International Devices Meeting (IEDM) ; Conference date: 05-12-1999 Through 08-12-1999",

}

TY - JOUR

T1 - Fast and accurate computation of interconnect capacitance

AU - Putot, S.

AU - Charlet, F.

AU - Witomski, P.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We present a new simulation tool for efficient extraction of 3D capacitance matrix in interconnect structures embedded in a multilayered dielectric environment. We use a fictitious domain method, which replaces the initial problem on a complex geometry by a problem on a simple shape domain embedding the initial domain, and is consequently ideally suited for the treatment of complex geometries. Numerical results confirm that this method is more efficient, both in cpu time and memory, than a finite elements or a boundary elements method.

AB - We present a new simulation tool for efficient extraction of 3D capacitance matrix in interconnect structures embedded in a multilayered dielectric environment. We use a fictitious domain method, which replaces the initial problem on a complex geometry by a problem on a simple shape domain embedding the initial domain, and is consequently ideally suited for the treatment of complex geometries. Numerical results confirm that this method is more efficient, both in cpu time and memory, than a finite elements or a boundary elements method.

M3 - Conference article

AN - SCOPUS:0033351009

SN - 0163-1918

SP - 893

EP - 896

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Fast and accurate computation of interconnect capacitance

Abstract

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