Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se2-based solar cells

Thibaud Hildebrandt; Margot Kozolinsky; Nicolas Loones; Muriel Bouttemy; Jackie Vigneron; Arnaud Etcheberry; Daniel Lincot; Frederique Donsanti; Negar Naghavi

doi:10.1109/JPHOTOV.2018.2871601

Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se₂-based solar cells

Thibaud Hildebrandt
, Margot Kozolinsky
, Nicolas Loones
, Muriel Bouttemy
, Jackie Vigneron
, Arnaud Etcheberry
, Daniel Lincot
, Frederique Donsanti
, Negar Naghavi

Lamsid/EDF/R and D
Institut Lavoisier de Versailles
Centre national de la recherche scientifique

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Chemical bath deposited (CBD) Zn(S,O) remains one of the most studied Cd-free buffer layers for Cu(In,Ga)Se₂-based (CIGSe) solar cells and has already been implemented at the industrial level for high-efficiency solar cells and modules. Exploring further routes of improvement is demanded and needed. One of the key routes is related to the high reactant concentration and high deposition temperature used for CBD-Zn(S,O). In this paper, we present a new family of reactants, based on hydroxylamine, presenting a high nucleophilic power and reactivity toward thiourea. We will show that the addition of these reactants allows to divide the concentration of thiourea by 3 and to perform Zn(S,O) deposition at room temperature. Efficiencies similar or even higher than the classical CBD cadmium sulfide are obtained due to higher J_sc and FF of the CIGSe-based solar cells. Growth mechanism and impact of hydroxylamine on the composition of the Zn(S,O) and cell performances will be discussed.

Original language	English
Article number	8479364
Pages (from-to)	1862-1867
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	6
DOIs	https://doi.org/10.1109/JPHOTOV.2018.2871601
Publication status	Published - 1 Nov 2018
Externally published	Yes

Keywords

Cd-free
Cu(In,Ga)Se (CIGSe)-based solar cells
Zn(S,O) buffer layer
chemical bath deposition (CBD)

Access to Document

10.1109/JPHOTOV.2018.2871601

Cite this

Hildebrandt, T., Kozolinsky, M., Loones, N., Bouttemy, M., Vigneron, J., Etcheberry, A., Lincot, D., Donsanti, F., & Naghavi, N. (2018). Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se₂-based solar cells. IEEE Journal of Photovoltaics, 8(6), 1862-1867. Article 8479364. https://doi.org/10.1109/JPHOTOV.2018.2871601

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title = "Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se2-based solar cells",

abstract = "Chemical bath deposited (CBD) Zn(S,O) remains one of the most studied Cd-free buffer layers for Cu(In,Ga)Se2-based (CIGSe) solar cells and has already been implemented at the industrial level for high-efficiency solar cells and modules. Exploring further routes of improvement is demanded and needed. One of the key routes is related to the high reactant concentration and high deposition temperature used for CBD-Zn(S,O). In this paper, we present a new family of reactants, based on hydroxylamine, presenting a high nucleophilic power and reactivity toward thiourea. We will show that the addition of these reactants allows to divide the concentration of thiourea by 3 and to perform Zn(S,O) deposition at room temperature. Efficiencies similar or even higher than the classical CBD cadmium sulfide are obtained due to higher Jsc and FF of the CIGSe-based solar cells. Growth mechanism and impact of hydroxylamine on the composition of the Zn(S,O) and cell performances will be discussed.",

keywords = "Cd-free, Cu(In,Ga)Se (CIGSe)-based solar cells, Zn(S,O) buffer layer, chemical bath deposition (CBD)",

author = "Thibaud Hildebrandt and Margot Kozolinsky and Nicolas Loones and Muriel Bouttemy and Jackie Vigneron and Arnaud Etcheberry and Daniel Lincot and Frederique Donsanti and Negar Naghavi",

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Hildebrandt, T, Kozolinsky, M, Loones, N, Bouttemy, M, Vigneron, J, Etcheberry, A, Lincot, D, Donsanti, F & Naghavi, N 2018, 'Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se₂-based solar cells', IEEE Journal of Photovoltaics, vol. 8, no. 6, 8479364, pp. 1862-1867. https://doi.org/10.1109/JPHOTOV.2018.2871601

Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se₂-based solar cells. / Hildebrandt, Thibaud; Kozolinsky, Margot; Loones, Nicolas et al.
In: IEEE Journal of Photovoltaics, Vol. 8, No. 6, 8479364, 01.11.2018, p. 1862-1867.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Fast chemical bath deposition process at room temperature of ZnS-based materials for buffer application in high-efficiency Cu(In,Ga)Se2-based solar cells

AU - Hildebrandt, Thibaud

AU - Kozolinsky, Margot

AU - Loones, Nicolas

AU - Bouttemy, Muriel

AU - Vigneron, Jackie

AU - Etcheberry, Arnaud

AU - Lincot, Daniel

AU - Donsanti, Frederique

AU - Naghavi, Negar

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Chemical bath deposited (CBD) Zn(S,O) remains one of the most studied Cd-free buffer layers for Cu(In,Ga)Se2-based (CIGSe) solar cells and has already been implemented at the industrial level for high-efficiency solar cells and modules. Exploring further routes of improvement is demanded and needed. One of the key routes is related to the high reactant concentration and high deposition temperature used for CBD-Zn(S,O). In this paper, we present a new family of reactants, based on hydroxylamine, presenting a high nucleophilic power and reactivity toward thiourea. We will show that the addition of these reactants allows to divide the concentration of thiourea by 3 and to perform Zn(S,O) deposition at room temperature. Efficiencies similar or even higher than the classical CBD cadmium sulfide are obtained due to higher Jsc and FF of the CIGSe-based solar cells. Growth mechanism and impact of hydroxylamine on the composition of the Zn(S,O) and cell performances will be discussed.

AB - Chemical bath deposited (CBD) Zn(S,O) remains one of the most studied Cd-free buffer layers for Cu(In,Ga)Se2-based (CIGSe) solar cells and has already been implemented at the industrial level for high-efficiency solar cells and modules. Exploring further routes of improvement is demanded and needed. One of the key routes is related to the high reactant concentration and high deposition temperature used for CBD-Zn(S,O). In this paper, we present a new family of reactants, based on hydroxylamine, presenting a high nucleophilic power and reactivity toward thiourea. We will show that the addition of these reactants allows to divide the concentration of thiourea by 3 and to perform Zn(S,O) deposition at room temperature. Efficiencies similar or even higher than the classical CBD cadmium sulfide are obtained due to higher Jsc and FF of the CIGSe-based solar cells. Growth mechanism and impact of hydroxylamine on the composition of the Zn(S,O) and cell performances will be discussed.

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KW - Cu(In,Ga)Se (CIGSe)-based solar cells

KW - Zn(S,O) buffer layer

KW - chemical bath deposition (CBD)

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M3 - Article

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VL - 8

SP - 1862

EP - 1867

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 6

M1 - 8479364