Fast electrodeposition route for cadmium telluride solar cells

C. Lepiller; P. Cowache; J. F. Guillemoles; N. Gibson; E. Özsan; D. Lincot

doi:10.1016/S0040-6090(99)00859-7

Fast electrodeposition route for cadmium telluride solar cells

C. Lepiller
, P. Cowache
, J. F. Guillemoles
, N. Gibson
, E. Özsan
, D. Lincot

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this work the possibility to increase markedly the electrodeposition rate of cadmium telluride has been investigated. After a theoretical analysis which has allowed to fix new electrodeposition conditions, based on an increase of the tellurium concentration, a complete experimental study has been carried out with varying the deposition parameters (composition, pH, potential, hydrodynamic regime). The films, deposited at rates up to 17 micron per hour, have been characterized before and after annealing. Results on cell formation with CdS show that junction formation occurs even for high deposition rates. Efficiencies around 6% (700 mV, 18.1 mA cm^-2) have been obtained for films grown at 2.7 μm/h.

Original language	English
Pages (from-to)	118-122
Number of pages	5
Journal	Thin Solid Films
Volume	361
DOIs	https://doi.org/10.1016/S0040-6090(99)00859-7
Publication status	Published - 21 Feb 2000
Externally published	Yes
Event	The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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Cite this

@article{f3368e538d654be7af003636d6682e06,

title = "Fast electrodeposition route for cadmium telluride solar cells",

abstract = "In this work the possibility to increase markedly the electrodeposition rate of cadmium telluride has been investigated. After a theoretical analysis which has allowed to fix new electrodeposition conditions, based on an increase of the tellurium concentration, a complete experimental study has been carried out with varying the deposition parameters (composition, pH, potential, hydrodynamic regime). The films, deposited at rates up to 17 micron per hour, have been characterized before and after annealing. Results on cell formation with CdS show that junction formation occurs even for high deposition rates. Efficiencies around 6\% (700 mV, 18.1 mA cm-2) have been obtained for films grown at 2.7 μm/h.",

author = "C. Lepiller and P. Cowache and Guillemoles, \{J. F.\} and N. Gibson and E. {\"O}zsan and D. Lincot",

year = "2000",

month = feb,

day = "21",

doi = "10.1016/S0040-6090(99)00859-7",

language = "English",

volume = "361",

pages = "118--122",

journal = "Thin Solid Films",

issn = "0040-6090",

note = "The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics ; Conference date: 01-06-1999 Through 04-06-1999",

}

TY - JOUR

T1 - Fast electrodeposition route for cadmium telluride solar cells

AU - Lepiller, C.

AU - Cowache, P.

AU - Guillemoles, J. F.

AU - Gibson, N.

AU - Özsan, E.

AU - Lincot, D.

PY - 2000/2/21

Y1 - 2000/2/21

N2 - In this work the possibility to increase markedly the electrodeposition rate of cadmium telluride has been investigated. After a theoretical analysis which has allowed to fix new electrodeposition conditions, based on an increase of the tellurium concentration, a complete experimental study has been carried out with varying the deposition parameters (composition, pH, potential, hydrodynamic regime). The films, deposited at rates up to 17 micron per hour, have been characterized before and after annealing. Results on cell formation with CdS show that junction formation occurs even for high deposition rates. Efficiencies around 6% (700 mV, 18.1 mA cm-2) have been obtained for films grown at 2.7 μm/h.

AB - In this work the possibility to increase markedly the electrodeposition rate of cadmium telluride has been investigated. After a theoretical analysis which has allowed to fix new electrodeposition conditions, based on an increase of the tellurium concentration, a complete experimental study has been carried out with varying the deposition parameters (composition, pH, potential, hydrodynamic regime). The films, deposited at rates up to 17 micron per hour, have been characterized before and after annealing. Results on cell formation with CdS show that junction formation occurs even for high deposition rates. Efficiencies around 6% (700 mV, 18.1 mA cm-2) have been obtained for films grown at 2.7 μm/h.

U2 - 10.1016/S0040-6090(99)00859-7

DO - 10.1016/S0040-6090(99)00859-7

M3 - Conference article

AN - SCOPUS:0033903109

SN - 0040-6090

VL - 361

SP - 118

EP - 122

JO - Thin Solid Films

JF - Thin Solid Films

T2 - The 1999 E-MRS Spring Conference, Symposium O: Chalcogenide Semicondutors for Photovoltaics

Y2 - 1 June 1999 through 4 June 1999

ER -

Fast electrodeposition route for cadmium telluride solar cells

Abstract

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