Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

M. Eddrief; M. Marangolo; S. Corlevi; G. M. Guichar; V. H. Etgens; R. Mattana; D. H. Mosca; F. Sirotti

doi:10.1063/1.1526170

Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

M. Eddrief
, M. Marangolo
, S. Corlevi
, G. M. Guichar
, V. H. Etgens
, R. Mattana
, D. H. Mosca
, F. Sirotti

Université Pierre et Marie Curie
Université Paris-Sud
Universidade Federal Do Paraná - Setor Palotina
Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

Original language	English
Pages (from-to)	4553-4555
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	24
DOIs	https://doi.org/10.1063/1.1526170
Publication status	Published - 9 Dec 2002
Externally published	Yes

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title = "Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission",

abstract = "The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.",

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doi = "10.1063/1.1526170",

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T1 - Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

AU - Eddrief, M.

AU - Marangolo, M.

AU - Corlevi, S.

AU - Guichar, G. M.

AU - Etgens, V. H.

AU - Mattana, R.

AU - Mosca, D. H.

AU - Sirotti, F.

PY - 2002/12/9

Y1 - 2002/12/9

N2 - The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

AB - The Fe/ZnSe(001) Schottky-barrier height determination was performed by core and valence level photoelectron emission spectroscopy. The samples were prepared by molecular beam epitaxy (MBE) in a double growth chamber system. The Fe-Fermi level position stabilized at 1.6 eV above the valence-band maximum of the n-type undoped ZnSe. A bulk-like d-band electronic structure was observed for thickness as thin as 2 ML of Fe.

U2 - 10.1063/1.1526170

DO - 10.1063/1.1526170

M3 - Article

AN - SCOPUS:0037049571

SN - 0003-6951

VL - 81

SP - 4553

EP - 4555

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Fe/ZnSe(001) Schottky-barrier height evaluated by photoemission

Abstract

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