Field-Free Switching of Perpendicular Magnetization in an Ultrathin Epitaxial Magnetic Insulator

Sajid Husain, Nicholas F. Prestes, Olivier Fayet, Sophie Collin, Florian Godel, Eric Jacquet, Thibaud Denneulin, Rafal E. Dunin-Borkowski, André Thiaville, Manuel Bibes, Henri Jaffrès, Nicolas Reyren, Albert Fert, Jean Marie George

Research output: Contribution to journalArticlepeer-review

Abstract

For energy-efficient magnetic memories, switching of perpendicular magnetization by spin-orbit torque (SOT) appears to be a promising solution. This SOT switching requires the assistance of an in-plane magnetic field to break the symmetry. Here, we demonstrate the field-free SOT switching of a perpendicularly magnetized thulium iron garnet (Tm3Fe5O12, TmIG). The polarity of the switching loops, clockwise or counterclockwise, is determined by the direction of the initial current pulses, in contrast with field-assisted switching where the polarity is controlled by the direction of the magnetic field. From Brillouin light scattering, we determined the Dzyaloshinskii-Moriya interaction (DMI) induced by the Pt-TmIG interface. We will discuss the possible origins of field-free switching and the roles of the interfacial DMI and cubic magnetic anisotropy of TmIG. This discussion is substantiated by magnetotransport, Kerr microscopy, and micromagnetic simulations. Our observation of field-free electrical switching of a magnetic insulator is an important milestone for low-power spintronic devices.

Original languageEnglish
Pages (from-to)2743-2750
Number of pages8
JournalNano Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 6 Mar 2024
Externally publishedYes

Keywords

  • Dzyaloshinskii−Moriya interaction
  • field-free magnetization switching
  • magnetic insulator
  • magnetocrystalline anisotropy
  • spin−orbit torques

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