Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions

D. Lacour; H. Jaffrès; F. Nguyen Van Dau; F. Petroff; A. Vaurès; J. Humbert

doi:10.1063/1.1450050

Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions

D. Lacour
, H. Jaffrès
, F. Nguyen Van Dau
, F. Petroff
, A. Vaurès
, J. Humbert

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir ₂₀Mn ₈₀ film in the "top-biased" geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al ₂O ₃ barrier.

Original language	English
Pages (from-to)	4655-4658
Number of pages	4
Journal	Journal of Applied Physics
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.1450050
Publication status	Published - 1 Apr 2002

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abstract = "An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir 20Mn 80 film in the {"}top-biased{"} geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al 2O 3 barrier.",

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AU - Lacour, D.

AU - Jaffrès, H.

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AU - Petroff, F.

AU - Vaurès, A.

AU - Humbert, J.

PY - 2002/4/1

Y1 - 2002/4/1

N2 - An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir 20Mn 80 film in the "top-biased" geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al 2O 3 barrier.

AB - An original concept of high sensitivity magnetic field sensor using the spin-dependent tunneling effect has been investigated. The required crossed-biased configuration is obtained by combining both shape energy originating from vicinal step bunched Si substrates and unidirectional exchange anisotropy supplied by an Ir 20Mn 80 film in the "top-biased" geometry. We demonstrate a linear and reversible signal at room temperature and above. The smooth loss of sensitivity at higher temperature is shown to be correlated to the thermal dependence of the exchange bias property when IrMn is deposited above the insulating Al 2O 3 barrier.

U2 - 10.1063/1.1450050

DO - 10.1063/1.1450050

M3 - Article

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions

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