Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor

S. Kasouit; S. Kumar; R. Vanderhaghen; P. Roca i Cabarrocas; I. French

doi:10.1016/S0022-3093(01)01187-5

Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF₄ precursor

S. Kasouit, S. Kumar, R. Vanderhaghen, P. Roca i Cabarrocas, I. French

Research output: Contribution to journal › Article › peer-review

Abstract

Structural and electrical properties of microcrystalline silicon (μc-Si:H) films grown at 200 °C from SiF₄ precursor have been studied. A particular growth mechanism in which the material is completely crystallised from the initial stages of deposition is revealed by in situ ellipsometry measurements. Time resolved microwave conductivity (TRMC) measurements were performed on samples deposited at various conditions and an optimum in the total pressure and the hydrogen dilution which maximise the crystalline fraction and the transport properties was found. A mobility as high as 7 cm²/V s was measured for a 0.14 μm thick sample. The nature of the substrate (a-SiN:H and SiO₂) and its deposition temperature were found to affect the composition of the μc-Si:H deposited on it.

Original language	English
Pages (from-to)	113-117
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	299-302
DOIs	https://doi.org/10.1016/S0022-3093(01)01187-5
Publication status	Published - 1 Jan 2002

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10.1016/S0022-3093(01)01187-5

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title = "Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor",

abstract = "Structural and electrical properties of microcrystalline silicon (μc-Si:H) films grown at 200 °C from SiF4 precursor have been studied. A particular growth mechanism in which the material is completely crystallised from the initial stages of deposition is revealed by in situ ellipsometry measurements. Time resolved microwave conductivity (TRMC) measurements were performed on samples deposited at various conditions and an optimum in the total pressure and the hydrogen dilution which maximise the crystalline fraction and the transport properties was found. A mobility as high as 7 cm2/V s was measured for a 0.14 μm thick sample. The nature of the substrate (a-SiN:H and SiO2) and its deposition temperature were found to affect the composition of the μc-Si:H deposited on it.",

author = "S. Kasouit and S. Kumar and R. Vanderhaghen and \{Roca i Cabarrocas\}, P. and I. French",

year = "2002",

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doi = "10.1016/S0022-3093(01)01187-5",

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T1 - Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor

AU - Kasouit, S.

AU - Kumar, S.

AU - Vanderhaghen, R.

AU - Roca i Cabarrocas, P.

AU - French, I.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Structural and electrical properties of microcrystalline silicon (μc-Si:H) films grown at 200 °C from SiF4 precursor have been studied. A particular growth mechanism in which the material is completely crystallised from the initial stages of deposition is revealed by in situ ellipsometry measurements. Time resolved microwave conductivity (TRMC) measurements were performed on samples deposited at various conditions and an optimum in the total pressure and the hydrogen dilution which maximise the crystalline fraction and the transport properties was found. A mobility as high as 7 cm2/V s was measured for a 0.14 μm thick sample. The nature of the substrate (a-SiN:H and SiO2) and its deposition temperature were found to affect the composition of the μc-Si:H deposited on it.

AB - Structural and electrical properties of microcrystalline silicon (μc-Si:H) films grown at 200 °C from SiF4 precursor have been studied. A particular growth mechanism in which the material is completely crystallised from the initial stages of deposition is revealed by in situ ellipsometry measurements. Time resolved microwave conductivity (TRMC) measurements were performed on samples deposited at various conditions and an optimum in the total pressure and the hydrogen dilution which maximise the crystalline fraction and the transport properties was found. A mobility as high as 7 cm2/V s was measured for a 0.14 μm thick sample. The nature of the substrate (a-SiN:H and SiO2) and its deposition temperature were found to affect the composition of the μc-Si:H deposited on it.

U2 - 10.1016/S0022-3093(01)01187-5

DO - 10.1016/S0022-3093(01)01187-5

M3 - Article

AN - SCOPUS:0036540447

SN - 0022-3093

VL - 299-302

SP - 113

EP - 117

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

ER -

Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF4 precursor

Abstract

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Fluorine and hydrogen effects on the growth and transport properties of microcrystalline silicon from SiF₄ precursor