Formation and characterization of CdS/methyl-grafted porous silicon junctions

M. Gros-Jean; R. Herino; J. N. Chazalviel; F. Ozanam; D. Lincot

doi:10.1016/S0921-5107(99)00271-8

Formation and characterization of CdS/methyl-grafted porous silicon junctions

M. Gros-Jean, R. Herino, J. N. Chazalviel, F. Ozanam, D. Lincot

Research output: Contribution to journal › Conference article › peer-review

Abstract

The incorporation of cadmium sulfide into fresh and methyl-grafted porous silicon layers is investigated. Methyl grafting is obtained by an electrochemical method. Cadmium sulfide deposition is achieved by using a sequential chemical bath deposition. Characterizations of the resulting structures by infrared spectroscopy, transmission electron microscopy and photoluminescence measurements are presented. They show that in the case of fresh porous layers, the CdS deposition process is accompanied with some oxidation of the porous material, leading to severe degradation of the luminescence properties. Such degradation is drastically reduced in the case of methyl-grafted layer.

Original language	English
Pages (from-to)	77-80
Number of pages	4
Journal	Materials Science and Engineering: B
Volume	69
DOIs	https://doi.org/10.1016/S0921-5107(99)00271-8
Publication status	Published - 14 Jan 2000
Externally published	Yes
Event	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Duration: 1 Jun 1999 → 4 Jun 1999

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10.1016/S0921-5107(99)00271-8

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@article{18d8476baed6478cad31067851d180f2,

title = "Formation and characterization of CdS/methyl-grafted porous silicon junctions",

abstract = "The incorporation of cadmium sulfide into fresh and methyl-grafted porous silicon layers is investigated. Methyl grafting is obtained by an electrochemical method. Cadmium sulfide deposition is achieved by using a sequential chemical bath deposition. Characterizations of the resulting structures by infrared spectroscopy, transmission electron microscopy and photoluminescence measurements are presented. They show that in the case of fresh porous layers, the CdS deposition process is accompanied with some oxidation of the porous material, leading to severe degradation of the luminescence properties. Such degradation is drastically reduced in the case of methyl-grafted layer.",

author = "M. Gros-Jean and R. Herino and Chazalviel, \{J. N.\} and F. Ozanam and D. Lincot",

year = "2000",

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doi = "10.1016/S0921-5107(99)00271-8",

language = "English",

volume = "69",

pages = "77--80",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

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TY - JOUR

T1 - Formation and characterization of CdS/methyl-grafted porous silicon junctions

AU - Gros-Jean, M.

AU - Herino, R.

AU - Chazalviel, J. N.

AU - Ozanam, F.

AU - Lincot, D.

PY - 2000/1/14

Y1 - 2000/1/14

N2 - The incorporation of cadmium sulfide into fresh and methyl-grafted porous silicon layers is investigated. Methyl grafting is obtained by an electrochemical method. Cadmium sulfide deposition is achieved by using a sequential chemical bath deposition. Characterizations of the resulting structures by infrared spectroscopy, transmission electron microscopy and photoluminescence measurements are presented. They show that in the case of fresh porous layers, the CdS deposition process is accompanied with some oxidation of the porous material, leading to severe degradation of the luminescence properties. Such degradation is drastically reduced in the case of methyl-grafted layer.

AB - The incorporation of cadmium sulfide into fresh and methyl-grafted porous silicon layers is investigated. Methyl grafting is obtained by an electrochemical method. Cadmium sulfide deposition is achieved by using a sequential chemical bath deposition. Characterizations of the resulting structures by infrared spectroscopy, transmission electron microscopy and photoluminescence measurements are presented. They show that in the case of fresh porous layers, the CdS deposition process is accompanied with some oxidation of the porous material, leading to severe degradation of the luminescence properties. Such degradation is drastically reduced in the case of methyl-grafted layer.

U2 - 10.1016/S0921-5107(99)00271-8

DO - 10.1016/S0921-5107(99)00271-8

M3 - Conference article

AN - SCOPUS:0033880267

SN - 0921-5107

VL - 69

SP - 77

EP - 80

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

Formation and characterization of CdS/methyl-grafted porous silicon junctions

Abstract

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