Formation of AlCuFe quasicrystalline thin films by solid state diffusion

T. Klein; O. G. Symko

doi:10.1063/1.111944

Formation of AlCuFe quasicrystalline thin films by solid state diffusion

T. Klein, O. G. Symko

University of Utah

Research output: Contribution to journal › Article › peer-review

Abstract

We show that thin films 3000 Å in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al₃Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.

Original language	English
Pages (from-to)	431-433
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	4
DOIs	https://doi.org/10.1063/1.111944
Publication status	Published - 1 Dec 1994
Externally published	Yes

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title = "Formation of AlCuFe quasicrystalline thin films by solid state diffusion",

abstract = "We show that thin films 3000 {\AA} in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.",

author = "T. Klein and Symko, \{O. G.\}",

year = "1994",

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doi = "10.1063/1.111944",

language = "English",

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pages = "431--433",

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T1 - Formation of AlCuFe quasicrystalline thin films by solid state diffusion

AU - Klein, T.

AU - Symko, O. G.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We show that thin films 3000 Å in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.

AB - We show that thin films 3000 Å in thickness of the icosahedral AlCuFe phase can be formed by solid state diffusion of sputtered Al, Cu, and Fe layers. As for bulk materials, we propose that the icosahedral phase grows by diffusion of the Cu in the Al3Fe layer previously formed by interdiffusion of the Al and Fe layers. These films present high resistivity values comparable to those obtained in bulk samples of high structural quality.

U2 - 10.1063/1.111944

DO - 10.1063/1.111944

M3 - Article

AN - SCOPUS:0000885773

SN - 0003-6951

VL - 64

SP - 431

EP - 433

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Formation of AlCuFe quasicrystalline thin films by solid state diffusion

Abstract

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