TY - GEN
T1 - Frequency and voltage effects on ser on a 65nm Sparc-V8 microprocessor under radiation test
AU - Bottoni, C.
AU - Coeffic, B.
AU - Daveau, J. M.
AU - Gasiot, G.
AU - Abouzeid, F.
AU - Clerc, S.
AU - Naviner, L.
AU - Roche, P.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/5/26
Y1 - 2015/5/26
N2 - We present both heavy ion and alpha test results for SPARCV8 pipelined-microprocessors fabricated in a space CMOS 65nm platform. Two design implementations, standard and radiation-hardened, are compared at 50/300MHz and 0.8V/1.2V. The dominant failure modes are identified and the failure cross-section is compared with fault injection prediction.
AB - We present both heavy ion and alpha test results for SPARCV8 pipelined-microprocessors fabricated in a space CMOS 65nm platform. Two design implementations, standard and radiation-hardened, are compared at 50/300MHz and 0.8V/1.2V. The dominant failure modes are identified and the failure cross-section is compared with fault injection prediction.
UR - https://www.scopus.com/pages/publications/84942903847
U2 - 10.1109/IRPS.2015.7112830
DO - 10.1109/IRPS.2015.7112830
M3 - Conference contribution
AN - SCOPUS:84942903847
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - SE121-SE124
BT - 2015 IEEE International Reliability Physics Symposium, IRPS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE International Reliability Physics Symposium, IRPS 2015
Y2 - 19 April 2015 through 23 April 2015
ER -