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Fundamental benefits of the staggered geometry for organic field-effect transistors

  • Institut polytechnique de Paris

Research output: Contribution to journalArticlepeer-review

Abstract

In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited by the contact electrode in staggered OFETs, whereas coplanar OFETs show strongly contact-limited behavior. This dissimilarity originates from the continuity (staggered) or discontinuity (coplanar) of the carrier concentration at the channel ends, which is directly connected to the channel potential profile. The calculated current-voltage curves also support these arguments as the current in coplanar OFETs follows the contact-limited transistor model.

Original languageEnglish
Article number5951732
Pages (from-to)1302-1304
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 1 Jan 2011

Keywords

  • 2-D simulation
  • Contact resistance
  • device geometry
  • organic field-effect transistors (OFETs)

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