GaAs/Ga1-xAlxAs Bragg reflectors at absorption wavelengths

F. Bretenaker; L. Zibell; J. P. Pocholle; E. Barbier; M. Papuchon

doi:10.1016/0030-4018(89)90413-6

GaAs/Ga_1-xAl_xAs Bragg reflectors at absorption wavelengths

F. Bretenaker
, L. Zibell
, J. P. Pocholle
, E. Barbier
, M. Papuchon

École Polytechnique

Research output: Contribution to journal › Article › peer-review

Abstract

Classical Bragg reflection computation is extended from the transparent wavelength region of GaAs to the 0.6-0.9 μm wavelength range. Our model includes (i) absorption effects, (ii) refractive index changes around the bandgap of both materials, and (iii) air Ga_1-xAl_xAs interface reflection. Reflection measures are made and compared with the results of the model. Actual thickness and Al atomic fractions of layers are being determined by double X-ray diffraction (DXD) technique. Good agreement between theory and experiment is observed.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Optics Communications
Volume	71
Issue number	3-4
DOIs	https://doi.org/10.1016/0030-4018(89)90413-6
Publication status	Published - 15 May 1989

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title = "GaAs/Ga1-xAlxAs Bragg reflectors at absorption wavelengths",

abstract = "Classical Bragg reflection computation is extended from the transparent wavelength region of GaAs to the 0.6-0.9 μm wavelength range. Our model includes (i) absorption effects, (ii) refractive index changes around the bandgap of both materials, and (iii) air Ga1-xAlxAs interface reflection. Reflection measures are made and compared with the results of the model. Actual thickness and Al atomic fractions of layers are being determined by double X-ray diffraction (DXD) technique. Good agreement between theory and experiment is observed.",

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T1 - GaAs/Ga1-xAlxAs Bragg reflectors at absorption wavelengths

AU - Bretenaker, F.

AU - Zibell, L.

AU - Pocholle, J. P.

AU - Barbier, E.

AU - Papuchon, M.

PY - 1989/5/15

Y1 - 1989/5/15

N2 - Classical Bragg reflection computation is extended from the transparent wavelength region of GaAs to the 0.6-0.9 μm wavelength range. Our model includes (i) absorption effects, (ii) refractive index changes around the bandgap of both materials, and (iii) air Ga1-xAlxAs interface reflection. Reflection measures are made and compared with the results of the model. Actual thickness and Al atomic fractions of layers are being determined by double X-ray diffraction (DXD) technique. Good agreement between theory and experiment is observed.

AB - Classical Bragg reflection computation is extended from the transparent wavelength region of GaAs to the 0.6-0.9 μm wavelength range. Our model includes (i) absorption effects, (ii) refractive index changes around the bandgap of both materials, and (iii) air Ga1-xAlxAs interface reflection. Reflection measures are made and compared with the results of the model. Actual thickness and Al atomic fractions of layers are being determined by double X-ray diffraction (DXD) technique. Good agreement between theory and experiment is observed.

UR - https://www.scopus.com/pages/publications/0024657137

U2 - 10.1016/0030-4018(89)90413-6

DO - 10.1016/0030-4018(89)90413-6

M3 - Article

AN - SCOPUS:0024657137

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VL - 71

SP - 129

EP - 132

JO - Optics Communications

JF - Optics Communications

IS - 3-4

ER -

GaAs/Ga_1-xAl_xAs Bragg reflectors at absorption wavelengths

Abstract

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