TY - GEN
T1 - GaAsPN-based PIN solar cells MBE-grown on GaP substrates
T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
AU - Da Silva, M.
AU - Almosni, S.
AU - Cornet, C.
AU - Létoublon, A.
AU - Levallois, C.
AU - Rale, P.
AU - Lombez, L.
AU - Guillemoles, J. F.
AU - Durand, O.
N1 - Publisher Copyright:
© 2015 SPIE.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.
AB - GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.
KW - III-V semiconductors
KW - dilute nitride
KW - molecular beam epitaxy
KW - multijunction solar cells
KW - silicon
U2 - 10.1117/12.2081376
DO - 10.1117/12.2081376
M3 - Conference contribution
AN - SCOPUS:84930030850
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
A2 - Sugiyama, Masakazu
A2 - Freundlich, Alexandre
A2 - Guillemoles, Jean-Francois
PB - SPIE
Y2 - 10 February 2015 through 12 February 2015
ER -