Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen; P. Seppälä; J. Oila; P. Hautojärvi; C. Corbel; O. Briot; R. L. Aulombard

doi:10.1063/1.122735

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen
, P. Seppälä
, J. Oila
, P. Hautojärvi
, C. Corbel
, O. Briot
, R. L. Aulombard

Aalto University
University of Montpellier (UMR MiVEGEC)

Research output: Contribution to journal › Article › peer-review

Abstract

We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 10¹⁶ to 10¹⁹cm^-3 when the V/III molar ratio increases from 1000 to 10000. In nitrogen rich conditions Ga lattice sites are thus left empty and Ga vacancies are abundantly formed. The creation of Ga vacancies is accompanied by the decrease of free electron concentration from 10²⁰ to 10¹⁶cm^-3, demonstrating their role as compensating centers.

Original language	English
Pages (from-to)	3253-3255
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	22
DOIs	https://doi.org/10.1063/1.122735
Publication status	Published - 1 Dec 1998
Externally published	Yes

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10.1063/1.122735

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title = "Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy",

abstract = "We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 1016 to 1019cm-3 when the V/III molar ratio increases from 1000 to 10000. In nitrogen rich conditions Ga lattice sites are thus left empty and Ga vacancies are abundantly formed. The creation of Ga vacancies is accompanied by the decrease of free electron concentration from 1020 to 1016cm-3, demonstrating their role as compensating centers.",

author = "K. Saarinen and P. Sepp{\"a}l{\"a} and J. Oila and P. Hautoj{\"a}rvi and C. Corbel and O. Briot and Aulombard, \{R. L.\}",

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T1 - Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

AU - Saarinen, K.

AU - Seppälä, P.

AU - Oila, J.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Briot, O.

AU - Aulombard, R. L.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 1016 to 1019cm-3 when the V/III molar ratio increases from 1000 to 10000. In nitrogen rich conditions Ga lattice sites are thus left empty and Ga vacancies are abundantly formed. The creation of Ga vacancies is accompanied by the decrease of free electron concentration from 1020 to 1016cm-3, demonstrating their role as compensating centers.

AB - We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the stoichiometry was varied. Ga vacancies are found in all samples. Their concentration increases from 1016 to 1019cm-3 when the V/III molar ratio increases from 1000 to 10000. In nitrogen rich conditions Ga lattice sites are thus left empty and Ga vacancies are abundantly formed. The creation of Ga vacancies is accompanied by the decrease of free electron concentration from 1020 to 1016cm-3, demonstrating their role as compensating centers.

U2 - 10.1063/1.122735

DO - 10.1063/1.122735

M3 - Article

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SN - 0003-6951

VL - 73

SP - 3253

EP - 3255

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

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