Gaussian density of state in organic thin film transistor model

Yvan Bonnassieux; Yongjeong Lee; Sungyeop Jung; Gilles Horowitz

Gaussian density of state in organic thin film transistor model

Yvan Bonnassieux
, Yongjeong Lee
, Sungyeop Jung
, Gilles Horowitz

Institut polytechnique de Paris
Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

For disordered organic semiconductors, Gaussian density-of-states (Gaussian DOS) and hopping transport are often proposed, described by analytical expressions for the charge carrier mobility as a function of electric field, the charge carrier density and temperature. We proposed an analytical model, easy adaptable to spice model, for the linear regime transfer characteristics of OFETs with power-law dependent mobility u and contact resistances RC. This work has been funded by Horizon 2020 Marie Skbdowska-Curie Research and Innovation Staff Exchange (RISE) Program (2015-2019) entitled DOMINO.

Original language	English
Title of host publication	25th International Display Workshops, IDW 2018
Publisher	International Display Workshops
Pages	1318-1319
Number of pages	2
ISBN (Electronic)	9781510883918
Publication status	Published - 1 Jan 2018
Event	25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	25th International Display Workshops, IDW 2018
Country/Territory	Japan
City	Nagoya
Period	12/12/18 → 14/12/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Analytic Model
Contact resistance OTFT.
Gaussian density of states
OTFT

Cite this

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title = "Gaussian density of state in organic thin film transistor model",

abstract = "For disordered organic semiconductors, Gaussian density-of-states (Gaussian DOS) and hopping transport are often proposed, described by analytical expressions for the charge carrier mobility as a function of electric field, the charge carrier density and temperature. We proposed an analytical model, easy adaptable to spice model, for the linear regime transfer characteristics of OFETs with power-law dependent mobility u and contact resistances RC. This work has been funded by Horizon 2020 Marie Skbdowska-Curie Research and Innovation Staff Exchange (RISE) Program (2015-2019) entitled DOMINO.",

keywords = "Analytic Model, Contact resistance OTFT., Gaussian density of states, OTFT",

author = "Yvan Bonnassieux and Yongjeong Lee and Sungyeop Jung and Gilles Horowitz",

note = "Publisher Copyright: {\textcopyright} 2018 by Society for Information Display. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",

year = "2018",

month = jan,

day = "1",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "1318--1319",

booktitle = "25th International Display Workshops, IDW 2018",

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Gaussian density of state in organic thin film transistor model. / Bonnassieux, Yvan; Lee, Yongjeong; Jung, Sungyeop et al.
25th International Display Workshops, IDW 2018. International Display Workshops, 2018. p. 1318-1319 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Lee, Yongjeong

AU - Jung, Sungyeop

AU - Horowitz, Gilles

PY - 2018/1/1

Y1 - 2018/1/1

N2 - For disordered organic semiconductors, Gaussian density-of-states (Gaussian DOS) and hopping transport are often proposed, described by analytical expressions for the charge carrier mobility as a function of electric field, the charge carrier density and temperature. We proposed an analytical model, easy adaptable to spice model, for the linear regime transfer characteristics of OFETs with power-law dependent mobility u and contact resistances RC. This work has been funded by Horizon 2020 Marie Skbdowska-Curie Research and Innovation Staff Exchange (RISE) Program (2015-2019) entitled DOMINO.

AB - For disordered organic semiconductors, Gaussian density-of-states (Gaussian DOS) and hopping transport are often proposed, described by analytical expressions for the charge carrier mobility as a function of electric field, the charge carrier density and temperature. We proposed an analytical model, easy adaptable to spice model, for the linear regime transfer characteristics of OFETs with power-law dependent mobility u and contact resistances RC. This work has been funded by Horizon 2020 Marie Skbdowska-Curie Research and Innovation Staff Exchange (RISE) Program (2015-2019) entitled DOMINO.

KW - Analytic Model

KW - Contact resistance OTFT.

KW - Gaussian density of states

KW - OTFT

M3 - Conference contribution

AN - SCOPUS:85072118680

T3 - Proceedings of the International Display Workshops

SP - 1318

EP - 1319

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

T2 - 25th International Display Workshops, IDW 2018

Y2 - 12 December 2018 through 14 December 2018

ER -

Gaussian density of state in organic thin film transistor model

Abstract

Publication series

Conference

UN SDGs

Keywords

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Cite this