GEOMETRY OF THE ABRUPT (110) Ge/GaAs INTERFACE.

C. A. Swarts; W. A. Goddard; T. C. McGill

doi:10.1116/1.571124

GEOMETRY OF THE ABRUPT (110) Ge/GaAs INTERFACE.

C. A. Swarts
, W. A. Goddard
, T. C. McGill

Research output: Contribution to journal › Conference article › peer-review

Abstract

A study was made of the structure relaxation at the abrupt (110) Ge/GaAs interface by applying quantum chemical methods to clusters modeling this interface. Application of this model to bulk Ge and to bulk GaAs leads to theoretical Ge-Ge and Ga-As bond distances of 2. 452 and 2. 451 A, respectively, in good agreement with the experimental values of 2. 450 and 2. 448 A, respectively. Application of the model Ge/GaAs (110) interface indicates that this interface is nearly ideal. The authors find a very slight reconstruction at the interface leading to a Ge-Ga bond distance which is 0. 04 A longer than the Ge-As bond distance of 2. 430 Angstrom. The calculated spacing of the interface layer is 2. 3% greater than that of bulk Ge or bulk GaAs.

Original language	English
Pages (from-to)	551-555
Number of pages	5
Journal	J Vac Sci Technol
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.571124
Publication status	Published - 1 Jan 1981
Externally published	Yes
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th - Williamsburg, VA, USA Duration: 27 Jan 1981 → 29 Jan 1981

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title = "GEOMETRY OF THE ABRUPT (110) Ge/GaAs INTERFACE.",

abstract = "A study was made of the structure relaxation at the abrupt (110) Ge/GaAs interface by applying quantum chemical methods to clusters modeling this interface. Application of this model to bulk Ge and to bulk GaAs leads to theoretical Ge-Ge and Ga-As bond distances of 2. 452 and 2. 451 A, respectively, in good agreement with the experimental values of 2. 450 and 2. 448 A, respectively. Application of the model Ge/GaAs (110) interface indicates that this interface is nearly ideal. The authors find a very slight reconstruction at the interface leading to a Ge-Ga bond distance which is 0. 04 A longer than the Ge-As bond distance of 2. 430 Angstrom. The calculated spacing of the interface layer is 2. 3\% greater than that of bulk Ge or bulk GaAs.",

author = "Swarts, \{C. A.\} and Goddard, \{W. A.\} and McGill, \{T. C.\}",

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pages = "551--555",

journal = "J Vac Sci Technol",

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TY - JOUR

T1 - GEOMETRY OF THE ABRUPT (110) Ge/GaAs INTERFACE.

AU - Swarts, C. A.

AU - Goddard, W. A.

AU - McGill, T. C.

PY - 1981/1/1

Y1 - 1981/1/1

N2 - A study was made of the structure relaxation at the abrupt (110) Ge/GaAs interface by applying quantum chemical methods to clusters modeling this interface. Application of this model to bulk Ge and to bulk GaAs leads to theoretical Ge-Ge and Ga-As bond distances of 2. 452 and 2. 451 A, respectively, in good agreement with the experimental values of 2. 450 and 2. 448 A, respectively. Application of the model Ge/GaAs (110) interface indicates that this interface is nearly ideal. The authors find a very slight reconstruction at the interface leading to a Ge-Ga bond distance which is 0. 04 A longer than the Ge-As bond distance of 2. 430 Angstrom. The calculated spacing of the interface layer is 2. 3% greater than that of bulk Ge or bulk GaAs.

AB - A study was made of the structure relaxation at the abrupt (110) Ge/GaAs interface by applying quantum chemical methods to clusters modeling this interface. Application of this model to bulk Ge and to bulk GaAs leads to theoretical Ge-Ge and Ga-As bond distances of 2. 452 and 2. 451 A, respectively, in good agreement with the experimental values of 2. 450 and 2. 448 A, respectively. Application of the model Ge/GaAs (110) interface indicates that this interface is nearly ideal. The authors find a very slight reconstruction at the interface leading to a Ge-Ga bond distance which is 0. 04 A longer than the Ge-As bond distance of 2. 430 Angstrom. The calculated spacing of the interface layer is 2. 3% greater than that of bulk Ge or bulk GaAs.

UR - https://www.scopus.com/pages/publications/0019610589

U2 - 10.1116/1.571124

DO - 10.1116/1.571124

M3 - Conference article

AN - SCOPUS:0019610589

VL - 19

SP - 551

EP - 555

JO - J Vac Sci Technol

JF - J Vac Sci Technol

IS - 3

T2 - Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 8th

Y2 - 27 January 1981 through 29 January 1981

ER -

GEOMETRY OF THE ABRUPT (110) Ge/GaAs INTERFACE.

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