Ge/SrTiO3(001): Correlation between interface chemistry and crystallographic orientation

B. Gobaut; J. Penuelas; G. Grenet; D. Ferrah; A. Benamrouche; A. Chettaoui; Y. Robach; C. Botella; M. El Kazzi; M. G. Silly; F. Sirotti; G. Saint-Girons

doi:10.1063/1.4764510

Ge/SrTiO₃(001): Correlation between interface chemistry and crystallographic orientation

B. Gobaut, J. Penuelas, G. Grenet, D. Ferrah, A. Benamrouche, A. Chettaoui, Y. Robach, C. Botella, M. El Kazzi, M. G. Silly, F. Sirotti, G. Saint-Girons

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, the desorption of a submonolayer deposit of Ge on SrTiO ₃(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such surface energy driven crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO₃ system.

Original language	English
Article number	093508
Journal	Journal of Applied Physics
Volume	112
Issue number	9
DOIs	https://doi.org/10.1063/1.4764510
Publication status	Published - 1 Nov 2012
Externally published	Yes

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title = "Ge/SrTiO3(001): Correlation between interface chemistry and crystallographic orientation",

abstract = "In this work, the desorption of a submonolayer deposit of Ge on SrTiO 3(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such surface energy driven crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO3 system.",

author = "B. Gobaut and J. Penuelas and G. Grenet and D. Ferrah and A. Benamrouche and A. Chettaoui and Y. Robach and C. Botella and \{El Kazzi\}, M. and Silly, \{M. G.\} and F. Sirotti and G. Saint-Girons",

year = "2012",

month = nov,

day = "1",

doi = "10.1063/1.4764510",

language = "English",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

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TY - JOUR

T1 - Ge/SrTiO3(001)

T2 - Correlation between interface chemistry and crystallographic orientation

AU - Gobaut, B.

AU - Penuelas, J.

AU - Grenet, G.

AU - Ferrah, D.

AU - Benamrouche, A.

AU - Chettaoui, A.

AU - Robach, Y.

AU - Botella, C.

AU - El Kazzi, M.

AU - Silly, M. G.

AU - Sirotti, F.

AU - Saint-Girons, G.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - In this work, the desorption of a submonolayer deposit of Ge on SrTiO 3(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such surface energy driven crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO3 system.

AB - In this work, the desorption of a submonolayer deposit of Ge on SrTiO 3(001) is studied by reflection high energy electron diffraction. The results are compared to those of a previous experiment done using soft x-ray photoelectron spectroscopy. Combining these techniques allows for correlating interface chemistry and crystal orientation, and for bringing clarifying elements concerning the competition between (111) and (001) crystal orientation typical for the semiconductor/perovskite epitaxial systems. Despite poor interface matching, (111)-oriented islands are stabilized at the expense of (001)-oriented islands due to the relatively low energy of their free facets. Such surface energy driven crystallographic orientation of the deposit is enhanced by the low adhesion energy characteristic of the Ge/SrTiO3 system.

U2 - 10.1063/1.4764510

DO - 10.1063/1.4764510

M3 - Article

AN - SCOPUS:84870934423

SN - 0021-8979

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 093508

ER -

Ge/SrTiO3(001): Correlation between interface chemistry and crystallographic orientation

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Ge/SrTiO₃(001): Correlation between interface chemistry and crystallographic orientation