Grain-boundaries in β-SiC: A joined HRTEM and numerical atomic study

C. Godon; C. Ragaru; O. Hardouin Duparc; M. Lancin

Grain-boundaries in β-SiC: A joined HRTEM and numerical atomic study

C. Godon
, C. Ragaru
, O. Hardouin Duparc
, M. Lancin

Institut des Matériaux de Nantes

Research output: Contribution to journal › Article › peer-review

Abstract

The β-grains which develop during recrystallisation contain many small {112}Σ=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Materials Science Forum
Volume	294-296
Publication status	Published - 1 Jan 1999

Keywords

Atomistic Simulation
Grain Boundary
HRTEM
β-SiC

Cite this

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title = "Grain-boundaries in β-SiC: A joined HRTEM and numerical atomic study",

abstract = "The β-grains which develop during recrystallisation contain many small \{112\}Σ=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.",

keywords = "Atomistic Simulation, Grain Boundary, HRTEM, β-SiC",

author = "C. Godon and C. Ragaru and \{Hardouin Duparc\}, O. and M. Lancin",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "294-296",

pages = "277--280",

journal = "Materials Science Forum",

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TY - JOUR

T1 - Grain-boundaries in β-SiC

T2 - A joined HRTEM and numerical atomic study

AU - Godon, C.

AU - Ragaru, C.

AU - Hardouin Duparc, O.

AU - Lancin, M.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The β-grains which develop during recrystallisation contain many small {112}Σ=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.

AB - The β-grains which develop during recrystallisation contain many small {112}Σ=3 boundaries. Their structure is characterised by HRTEM performed at 300 kV and image contrast is simulated in order to determine the atomic reconstruction. We perform atomistic calculations (molecular dynamics) with the angular N-body Tersoff potential adapted to SiC in order to compare these reconstructions with our HRTEM observations.

KW - Atomistic Simulation

KW - Grain Boundary

KW - HRTEM

KW - β-SiC

M3 - Article

AN - SCOPUS:0000697739

SN - 0255-5476

VL - 294-296

SP - 277

EP - 280

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Grain-boundaries in β-SiC: A joined HRTEM and numerical atomic study

Abstract

Keywords

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