Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD

C. Niikura; S. Y. Kim; B. Drévillon; Y. Poissant; P. Roca i Cabarrocas; J. E. Bourée

doi:10.1016/S0040-6090(01)01246-9

Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD

C. Niikura
, S. Y. Kim
, B. Drévillon
, Y. Poissant
, P. Roca i Cabarrocas
, J. E. Bourée

Research output: Contribution to journal › Conference article › peer-review

Abstract

Silicon-hydrogen bonding configurations, during or after microcrystalline silicon (μc-Si:H) film deposition by catalytic CVD, have been investigated for the first time by real-time in-situ Fourier transform phase modulated infrared ellipsometry (FTPME). FTPME measurements have been performed during and after μc-Si:H film depositions using high, low or variable dilutions of silane in hydrogen. The silicon-hydrogen bonding configurations of μc-Si:H films have been correlated with their corresponding structural properties as deduced from UV-visible ellipsometry analyses. A 4.6% efficiency has been obtained for μc-Si:H n-i-p solar cells, with the i-layer deposited by catalytic CVD at 200°C on a glass substrate using a variable hydrogen dilution process. Further optimization should improve the performance of catalytic CVD μc-Si:H solar cells.

Original language	English
Pages (from-to)	178-183
Number of pages	6
Journal	Thin Solid Films
Volume	395
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(01)01246-9
Publication status	Published - 3 Sept 2001
Event	Proceedings of the First International Conference on Cat-CVD - Kanazawa, Japan Duration: 14 Nov 2000 → 17 Nov 2000

Keywords

Chemical vapor deposition (CVD)
Ellipsometry
Silicon
Solar cells

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10.1016/S0040-6090(01)01246-9

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@article{401917e2f20640c9b1da1db5abe9ed49,

title = "Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD",

abstract = "Silicon-hydrogen bonding configurations, during or after microcrystalline silicon (μc-Si:H) film deposition by catalytic CVD, have been investigated for the first time by real-time in-situ Fourier transform phase modulated infrared ellipsometry (FTPME). FTPME measurements have been performed during and after μc-Si:H film depositions using high, low or variable dilutions of silane in hydrogen. The silicon-hydrogen bonding configurations of μc-Si:H films have been correlated with their corresponding structural properties as deduced from UV-visible ellipsometry analyses. A 4.6\% efficiency has been obtained for μc-Si:H n-i-p solar cells, with the i-layer deposited by catalytic CVD at 200°C on a glass substrate using a variable hydrogen dilution process. Further optimization should improve the performance of catalytic CVD μc-Si:H solar cells.",

keywords = "Chemical vapor deposition (CVD), Ellipsometry, Silicon, Solar cells",

author = "C. Niikura and Kim, \{S. Y.\} and B. Dr{\'e}villon and Y. Poissant and \{Roca i Cabarrocas\}, P. and Bour{\'e}e, \{J. E.\}",

year = "2001",

month = sep,

day = "3",

doi = "10.1016/S0040-6090(01)01246-9",

language = "English",

volume = "395",

pages = "178--183",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

note = "Proceedings of the First International Conference on Cat-CVD ; Conference date: 14-11-2000 Through 17-11-2000",

}

TY - JOUR

T1 - Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD

AU - Niikura, C.

AU - Kim, S. Y.

AU - Drévillon, B.

AU - Poissant, Y.

AU - Roca i Cabarrocas, P.

AU - Bourée, J. E.

PY - 2001/9/3

Y1 - 2001/9/3

N2 - Silicon-hydrogen bonding configurations, during or after microcrystalline silicon (μc-Si:H) film deposition by catalytic CVD, have been investigated for the first time by real-time in-situ Fourier transform phase modulated infrared ellipsometry (FTPME). FTPME measurements have been performed during and after μc-Si:H film depositions using high, low or variable dilutions of silane in hydrogen. The silicon-hydrogen bonding configurations of μc-Si:H films have been correlated with their corresponding structural properties as deduced from UV-visible ellipsometry analyses. A 4.6% efficiency has been obtained for μc-Si:H n-i-p solar cells, with the i-layer deposited by catalytic CVD at 200°C on a glass substrate using a variable hydrogen dilution process. Further optimization should improve the performance of catalytic CVD μc-Si:H solar cells.

AB - Silicon-hydrogen bonding configurations, during or after microcrystalline silicon (μc-Si:H) film deposition by catalytic CVD, have been investigated for the first time by real-time in-situ Fourier transform phase modulated infrared ellipsometry (FTPME). FTPME measurements have been performed during and after μc-Si:H film depositions using high, low or variable dilutions of silane in hydrogen. The silicon-hydrogen bonding configurations of μc-Si:H films have been correlated with their corresponding structural properties as deduced from UV-visible ellipsometry analyses. A 4.6% efficiency has been obtained for μc-Si:H n-i-p solar cells, with the i-layer deposited by catalytic CVD at 200°C on a glass substrate using a variable hydrogen dilution process. Further optimization should improve the performance of catalytic CVD μc-Si:H solar cells.

KW - Chemical vapor deposition (CVD)

KW - Ellipsometry

KW - Silicon

KW - Solar cells

UR - https://www.scopus.com/pages/publications/0035800974

U2 - 10.1016/S0040-6090(01)01246-9

DO - 10.1016/S0040-6090(01)01246-9

M3 - Conference article

AN - SCOPUS:0035800974

SN - 0040-6090

VL - 395

SP - 178

EP - 183

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proceedings of the First International Conference on Cat-CVD

Y2 - 14 November 2000 through 17 November 2000

ER -

Growth mechanisms and structural properties of microcrystalline silicon films deposited by catalytic CVD

Abstract

Keywords

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