Growth of microcrystalline silicon on flexible substrates

Y. Djeridane; V. D. Bui; H. Jae Kim; Y. Bonnassieux; P. Roca i Cabarrocas

Growth of microcrystalline silicon on flexible substrates

Y. Djeridane
, V. D. Bui
, H. Jae Kim
, Y. Bonnassieux
, P. Roca i Cabarrocas

Institut polytechnique de Paris

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm²/V.s.

Original language	English
Pages (from-to)	184-186
Number of pages	3
Journal	SID Conference Record of the International Display Research Conference
Volume	2005
Publication status	Published - 1 Dec 2005
Event	25th Internatioanl Display Research Conference, EURODISPLAY 2005 - Edinburgh, SCO, United Kingdom Duration: 20 Sept 2005 → 22 Sept 2005

Cite this

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title = "Growth of microcrystalline silicon on flexible substrates",

abstract = "In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96\% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.",

author = "Y. Djeridane and Bui, \{V. D.\} and Kim, \{H. Jae\} and Y. Bonnassieux and \{Roca i Cabarrocas\}, P.",

year = "2005",

month = dec,

day = "1",

language = "English",

volume = "2005",

pages = "184--186",

journal = "SID Conference Record of the International Display Research Conference",

issn = "1083-1312",

note = "25th Internatioanl Display Research Conference, EURODISPLAY 2005 ; Conference date: 20-09-2005 Through 22-09-2005",

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TY - JOUR

T1 - Growth of microcrystalline silicon on flexible substrates

AU - Djeridane, Y.

AU - Bui, V. D.

AU - Kim, H. Jae

AU - Bonnassieux, Y.

AU - Roca i Cabarrocas, P.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

AB - In this paper we extend our previous studies of μc-Si:H deposition on glass to plastic foils, aiming to produce bottom gate TFTs. In particular, we have obtained films with a crystalline fraction as high as 96% even at 150°C, as deduced from UV-visible ellipsometry and Raman spectroscopy measurements. Moreover, we have used glass coated polyimide substrates to process bottom gate TFTs. Our first results show that even on these substrates we can achieve a mobility of 0.4 cm2/V.s.

M3 - Conference article

AN - SCOPUS:33846618686

SN - 1083-1312

VL - 2005

SP - 184

EP - 186

JO - SID Conference Record of the International Display Research Conference

JF - SID Conference Record of the International Display Research Conference

T2 - 25th Internatioanl Display Research Conference, EURODISPLAY 2005

Y2 - 20 September 2005 through 22 September 2005

ER -

Growth of microcrystalline silicon on flexible substrates

Abstract

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