Guided growth of in-plane silicon nanowires

Linwei Yu; Maher Oudwan; Oumkelthoum Moustapha; Franck Fortuna; Pere Roca I Cabarrocas

doi:10.1063/1.3227667

Guided growth of in-plane silicon nanowires

Linwei Yu
, Maher Oudwan
, Oumkelthoum Moustapha
, Franck Fortuna
, Pere Roca I Cabarrocas

Institut polytechnique de Paris
Université Paris-Saclay

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.

Original language	English
Article number	113106
Journal	Applied Physics Letters
Volume	95
Issue number	11
DOIs	https://doi.org/10.1063/1.3227667
Publication status	Published - 5 Oct 2009

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title = "Guided growth of in-plane silicon nanowires",

abstract = "We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.",

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AU - Moustapha, Oumkelthoum

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AU - Roca I Cabarrocas, Pere

PY - 2009/10/5

Y1 - 2009/10/5

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AB - We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.

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VL - 95

JO - Applied Physics Letters

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Guided growth of in-plane silicon nanowires

Abstract

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