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Guided-mode resonator for thin InGaAs P-i-N short-wave infrared photo-diode

  • Michaël Verdun
  • , Benjamin Portier
  • , Katarzyna Jaworowicz
  • , Julien Jaeck
  • , François Lelarge
  • , Stéphane Guilet
  • , Christophe Dupuis
  • , Riad Haïdar
  • , Fabrice Pardo
  • , Jean Luc Pelouard
  • Université Paris-Saclay
  • Alcatel-Thales III-V Laboratory

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

We investigate a resonant photodiode transferred onto a gold mirror. This comprises a backside dielectric subwavelength periodic structure and an absorbing region as thin as 90 nm. Electro-optical characterizations of individual pixels featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe a near perfect collection of the photo-carriers and external quantum efficiency of up to 71% around 1.55 μm.

Original languageEnglish
Article number053501
JournalApplied Physics Letters
Volume108
Issue number5
DOIs
Publication statusPublished - 1 Feb 2016
Externally publishedYes

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