He migration in implanted UO2 sintered disks

S. Guilbert; T. Sauvage; P. Garcia; G. Carlot; M. F. Barthe; P. Desgardin; G. Blondiaux; C. Corbel; J. P. Piron; J. M. Gras

doi:10.1016/j.jnucmat.2004.01.024

He migration in implanted UO₂ sintered disks

S. Guilbert, T. Sauvage, P. Garcia, G. Carlot, M. F. Barthe, P. Desgardin, G. Blondiaux, C. Corbel, J. P. Piron, J. M. Gras

Research output: Contribution to journal › Article › peer-review

Abstract

The behaviour of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO₂ disks have been implanted with 1 MeV ³He ions at a fluence of 1×10¹⁶ ³Hecm^-2 using a Van der Graaff accelerator. These implantation conditions lead to a local helium concentration of 0.2 at.% at a depth of 1.9 μm in UO₂. The ³He(d, α)¹H Nuclear Reaction Analysis method was used to determine the helium depth profile after the various annealing stages. The experimental results measured after 1100 °C anneal were analysed using a simple model which satisfactorily reproduces the observed helium depth profile changes. The intragranular helium diffusion coefficient is estimated and the result is assessed against other data published in the open literature.

Original language	English
Pages (from-to)	88-96
Number of pages	9
Journal	Journal of Nuclear Materials
Volume	327
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jnucmat.2004.01.024
Publication status	Published - 1 May 2004
Externally published	Yes

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10.1016/j.jnucmat.2004.01.024

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@article{69c1b3b9d7194c93ad97c1448e6190f2,

title = "He migration in implanted UO2 sintered disks",

abstract = "The behaviour of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV 3He ions at a fluence of 1×1016 3Hecm-2 using a Van der Graaff accelerator. These implantation conditions lead to a local helium concentration of 0.2 at.\% at a depth of 1.9 μm in UO2. The 3He(d, α)1H Nuclear Reaction Analysis method was used to determine the helium depth profile after the various annealing stages. The experimental results measured after 1100 °C anneal were analysed using a simple model which satisfactorily reproduces the observed helium depth profile changes. The intragranular helium diffusion coefficient is estimated and the result is assessed against other data published in the open literature.",

author = "S. Guilbert and T. Sauvage and P. Garcia and G. Carlot and Barthe, \{M. F.\} and P. Desgardin and G. Blondiaux and C. Corbel and Piron, \{J. P.\} and Gras, \{J. M.\}",

year = "2004",

month = may,

day = "1",

doi = "10.1016/j.jnucmat.2004.01.024",

language = "English",

volume = "327",

pages = "88--96",

journal = "Journal of Nuclear Materials",

issn = "0022-3115",

number = "2-3",

}

TY - JOUR

T1 - He migration in implanted UO2 sintered disks

AU - Guilbert, S.

AU - Sauvage, T.

AU - Garcia, P.

AU - Carlot, G.

AU - Barthe, M. F.

AU - Desgardin, P.

AU - Blondiaux, G.

AU - Corbel, C.

AU - Piron, J. P.

AU - Gras, J. M.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The behaviour of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV 3He ions at a fluence of 1×1016 3Hecm-2 using a Van der Graaff accelerator. These implantation conditions lead to a local helium concentration of 0.2 at.% at a depth of 1.9 μm in UO2. The 3He(d, α)1H Nuclear Reaction Analysis method was used to determine the helium depth profile after the various annealing stages. The experimental results measured after 1100 °C anneal were analysed using a simple model which satisfactorily reproduces the observed helium depth profile changes. The intragranular helium diffusion coefficient is estimated and the result is assessed against other data published in the open literature.

AB - The behaviour of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV 3He ions at a fluence of 1×1016 3Hecm-2 using a Van der Graaff accelerator. These implantation conditions lead to a local helium concentration of 0.2 at.% at a depth of 1.9 μm in UO2. The 3He(d, α)1H Nuclear Reaction Analysis method was used to determine the helium depth profile after the various annealing stages. The experimental results measured after 1100 °C anneal were analysed using a simple model which satisfactorily reproduces the observed helium depth profile changes. The intragranular helium diffusion coefficient is estimated and the result is assessed against other data published in the open literature.

U2 - 10.1016/j.jnucmat.2004.01.024

DO - 10.1016/j.jnucmat.2004.01.024

M3 - Article

AN - SCOPUS:11144357553

SN - 0022-3115

VL - 327

SP - 88

EP - 96

JO - Journal of Nuclear Materials

JF - Journal of Nuclear Materials

IS - 2-3

ER -

He migration in implanted UO2 sintered disks

Abstract

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He migration in implanted UO₂ sintered disks