Helium behavior in UO2 polycrystalline disks

S. Guilbert, T. Sauvage, H. Erramli, M. F. Barthe, P. Desgardin, G. Blondiaux, C. Corbel, J. P. Piron

Research output: Contribution to journalArticlepeer-review

Abstract

The behavior of helium implanted in sintered uranium dioxide disks has been investigated as a function of annealing temperature. UO2 disks have been implanted with 1 MeV 3He at a nominal fluence of 5 × 1016 3Hecm-2 using a Van de Graaff accelerator. The 3He(d,α)1H nuclear reaction analysis method was used to determine the helium depth profile in the UO2 disks. Partial flaking was observed after annealing at 500 °C for local He concentration of 1 at.%. After annealing at 600 °C flaking has affected the whole surface. The formation of helium bubbles is discussed.

Original languageEnglish
Pages (from-to)121-128
Number of pages8
JournalJournal of Nuclear Materials
Volume321
Issue number2-3
DOIs
Publication statusPublished - 15 Sept 2003
Externally publishedYes

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